Heteroepitaxial growth of highly conductive metal oxide RuO2 thin films by pulsed laser deposition

Q. X. Jia; X. D. Wu; S. R. Foltyn; A. T. Findikoglu; P. Tiwari; J. P. Zheng; T. R. Jow

doi:10.1063/1.115054

Heteroepitaxial growth of highly conductive metal oxide RuO₂ thin films by pulsed laser deposition

Q. X. Jia
, X. D. Wu
, S. R. Foltyn
, A. T. Findikoglu
, P. Tiwari
, J. P. Zheng
, T. R. Jow

Los Alamos National Laboratory
U.S. Army Research Laboratory

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Highly conductive ruthenium oxide (RuO₂) has been epitaxially grown on LaAlO₃ substrates by pulsed laser deposition. The RuO ₂ film is (h00) oriented normal to the substrate surface. The heteroepitaxial growth of RuO₂ on LaAlO₃ is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO₂ thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO₂ thin films demonstrate a quite low room-temperature resistivity of 35±2 μΩ cm at deposition temperatures of above 500°C.

Original language	English
Pages (from-to)	1677
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115054
State	Published - 1995

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@article{eca6cab4e2ea4dc5b6fd83a85045c711,

title = "Heteroepitaxial growth of highly conductive metal oxide RuO2 thin films by pulsed laser deposition",

abstract = "Highly conductive ruthenium oxide (RuO2) has been epitaxially grown on LaAlO3 substrates by pulsed laser deposition. The RuO 2 film is (h00) oriented normal to the substrate surface. The heteroepitaxial growth of RuO2 on LaAlO3 is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO2 thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO2 thin films demonstrate a quite low room-temperature resistivity of 35±2 μΩ cm at deposition temperatures of above 500°C.",

author = "Jia, \{Q. X.\} and Wu, \{X. D.\} and Foltyn, \{S. R.\} and Findikoglu, \{A. T.\} and P. Tiwari and Zheng, \{J. P.\} and Jow, \{T. R.\}",

year = "1995",

doi = "10.1063/1.115054",

language = "English",

volume = "67",

pages = "1677",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Heteroepitaxial growth of highly conductive metal oxide RuO2 thin films by pulsed laser deposition

AU - Jia, Q. X.

AU - Wu, X. D.

AU - Foltyn, S. R.

AU - Findikoglu, A. T.

AU - Tiwari, P.

AU - Zheng, J. P.

AU - Jow, T. R.

PY - 1995

Y1 - 1995

N2 - Highly conductive ruthenium oxide (RuO2) has been epitaxially grown on LaAlO3 substrates by pulsed laser deposition. The RuO 2 film is (h00) oriented normal to the substrate surface. The heteroepitaxial growth of RuO2 on LaAlO3 is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO2 thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO2 thin films demonstrate a quite low room-temperature resistivity of 35±2 μΩ cm at deposition temperatures of above 500°C.

AB - Highly conductive ruthenium oxide (RuO2) has been epitaxially grown on LaAlO3 substrates by pulsed laser deposition. The RuO 2 film is (h00) oriented normal to the substrate surface. The heteroepitaxial growth of RuO2 on LaAlO3 is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO2 thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO2 thin films demonstrate a quite low room-temperature resistivity of 35±2 μΩ cm at deposition temperatures of above 500°C.

UR - https://www.scopus.com/pages/publications/0000359098

U2 - 10.1063/1.115054

DO - 10.1063/1.115054

M3 - Article

AN - SCOPUS:0000359098

SN - 0003-6951

VL - 67

SP - 1677

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Heteroepitaxial growth of highly conductive metal oxide RuO₂ thin films by pulsed laser deposition

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