Growth optimization of YBa 2NbO 6 buffer layers

S. Sathiraju; N. A. Yust; R. N. Nekkanti; I. Martense; A. L. Campbell; T. L. Peterson; T. J. Haugan; J. C. Tolliver; P. N. Barnes; Q. X. Jia; P. N. Arendt

Growth optimization of YBa ₂NbO ₆ buffer layers

S. Sathiraju
, N. A. Yust
, R. N. Nekkanti
, I. Martense
, A. L. Campbell
, T. L. Peterson
, T. J. Haugan
, J. C. Tolliver
, P. N. Barnes
, Q. X. Jia
, P. N. Arendt

Department of Materials Design and Innovation

Air Force Research Laboratory
UES, Inc.
Los Alamos National Laboratory

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The growth optimization of YBa ₂NbO ₆ (YBNO) buffer layers on LaAlO ₃ (100), MgO (100) single crystals, and IBAD MgO buffered Inconel substrates has been investigated. X-ray diffraction confirms the epitaxial growth of highly h00 oriented YBNO thin films on single crystal substrates and IBAD MgO buffered Inconel substrates. The best average surface roughness of the YBNO films deposited on buffered substrates is 2 nm. The critical temperature (T _c) of YBa ₂Cu ₃O _7-x (Y-123) thin films deposited on these YBNO buffer layers ranges from 80 to 87 K. The deposition of YBNO may be further optimized and the IBAD MgO layers were only of sufficient quality to test for compatibility and epitaxial growth of the new buffer. Hence, the results presented here are preliminary in nature and can be improved upon.

Original language	English
Article number	EE8.7
Pages (from-to)	177-179
Number of pages	3
Journal	Materials Research Society Symposium - Proceedings
Volume	EXS
Issue number	3
State	Published - 2004
Event	2003 MRS Fall Meeting - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003

Cite this

@article{b5448448f3e044dfa2c3170e1fb7afeb,

title = "Growth optimization of YBa 2NbO 6 buffer layers",

abstract = "The growth optimization of YBa 2NbO 6 (YBNO) buffer layers on LaAlO 3 (100), MgO (100) single crystals, and IBAD MgO buffered Inconel substrates has been investigated. X-ray diffraction confirms the epitaxial growth of highly h00 oriented YBNO thin films on single crystal substrates and IBAD MgO buffered Inconel substrates. The best average surface roughness of the YBNO films deposited on buffered substrates is 2 nm. The critical temperature (T c) of YBa 2Cu 3O 7-x (Y-123) thin films deposited on these YBNO buffer layers ranges from 80 to 87 K. The deposition of YBNO may be further optimized and the IBAD MgO layers were only of sufficient quality to test for compatibility and epitaxial growth of the new buffer. Hence, the results presented here are preliminary in nature and can be improved upon.",

author = "S. Sathiraju and Yust, \{N. A.\} and Nekkanti, \{R. N.\} and I. Martense and Campbell, \{A. L.\} and Peterson, \{T. L.\} and Haugan, \{T. J.\} and Tolliver, \{J. C.\} and Barnes, \{P. N.\} and Jia, \{Q. X.\} and Arendt, \{P. N.\}",

year = "2004",

language = "English",

volume = "EXS",

pages = "177--179",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

number = "3",

note = "2003 MRS Fall Meeting ; Conference date: 01-12-2003 Through 04-12-2003",

}

TY - JOUR

T1 - Growth optimization of YBa 2NbO 6 buffer layers

AU - Sathiraju, S.

AU - Yust, N. A.

AU - Nekkanti, R. N.

AU - Martense, I.

AU - Campbell, A. L.

AU - Peterson, T. L.

AU - Haugan, T. J.

AU - Tolliver, J. C.

AU - Barnes, P. N.

AU - Jia, Q. X.

AU - Arendt, P. N.

PY - 2004

Y1 - 2004

N2 - The growth optimization of YBa 2NbO 6 (YBNO) buffer layers on LaAlO 3 (100), MgO (100) single crystals, and IBAD MgO buffered Inconel substrates has been investigated. X-ray diffraction confirms the epitaxial growth of highly h00 oriented YBNO thin films on single crystal substrates and IBAD MgO buffered Inconel substrates. The best average surface roughness of the YBNO films deposited on buffered substrates is 2 nm. The critical temperature (T c) of YBa 2Cu 3O 7-x (Y-123) thin films deposited on these YBNO buffer layers ranges from 80 to 87 K. The deposition of YBNO may be further optimized and the IBAD MgO layers were only of sufficient quality to test for compatibility and epitaxial growth of the new buffer. Hence, the results presented here are preliminary in nature and can be improved upon.

AB - The growth optimization of YBa 2NbO 6 (YBNO) buffer layers on LaAlO 3 (100), MgO (100) single crystals, and IBAD MgO buffered Inconel substrates has been investigated. X-ray diffraction confirms the epitaxial growth of highly h00 oriented YBNO thin films on single crystal substrates and IBAD MgO buffered Inconel substrates. The best average surface roughness of the YBNO films deposited on buffered substrates is 2 nm. The critical temperature (T c) of YBa 2Cu 3O 7-x (Y-123) thin films deposited on these YBNO buffer layers ranges from 80 to 87 K. The deposition of YBNO may be further optimized and the IBAD MgO layers were only of sufficient quality to test for compatibility and epitaxial growth of the new buffer. Hence, the results presented here are preliminary in nature and can be improved upon.

UR - https://www.scopus.com/pages/publications/23844451702

M3 - Conference article

AN - SCOPUS:23844451702

SN - 0272-9172

VL - EXS

SP - 177

EP - 179

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

IS - 3

M1 - EE8.7

T2 - 2003 MRS Fall Meeting

Y2 - 1 December 2003 through 4 December 2003

ER -

Growth optimization of YBa ₂NbO ₆ buffer layers

Abstract

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