Abstract
The formation of semiconductor quantum wires on the top of ridges and by deposition through shadowing mask has been simulated by Monte Carlo technique. The simulation model includes tetrahedral lattice coordination of semiconductor material, atom-atom interactions out to second-nearest neighbors, and surface reconstruction effects. The growth of quantum wires with the top (001) surface and (111) sidewalls is demonstrated. The formation of (111) sidewalls of higher quality than that of top (001) surface has been obtained due to larger diffusion coefficient of adatoms on (111) plane. The dependence of the quality of quantum wires on the substrate temperature is shown.
| Original language | English |
|---|---|
| Pages | 170-178 |
| Number of pages | 9 |
| State | Published - 1995 |
| Event | Proceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA Duration: Aug 7 1995 → Aug 9 1995 |
Conference
| Conference | Proceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits |
|---|---|
| City | Ithaca, NY, USA |
| Period | 08/7/95 → 08/9/95 |
Fingerprint
Dive into the research topics of 'Growth of semiconductor quantum wires: A Monte Carlo study'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver