Abstract
The current carrying capabilities of RABiTS are connected to the crystalline quality of the seed buffer layer and the stability of the metal/seed layer interface. Our study shows that the epitaxial growth of commonly used seed layers on textured Ni is mediated by a sulfur superstructure present on the metal surface. Many structural defects generated during seed layer growth (secondary orientations, in-plane rotation, incomplete cube texture) can be related to the S surface concentration and superstructure coverage. More generally, our results indicate that the epitaxial deposition of several classes of oxides (fluorite, perovskite, RE2O3) on several {100} 〈100〉 fcc metals depends, in addition to chemical stability and lattice match, on the existence and optimization of S superstructures on the metal surface. On these bases, we discuss issues related to the growth of different oxides on Ni, Ni-alloys, and Pd surfaces having different chemical and structural properties.
| Original language | English |
|---|---|
| Pages (from-to) | 2646-2650 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Applied Superconductivity |
| Volume | 13 |
| Issue number | 2 III |
| DOIs | |
| State | Published - Jun 2003 |
| Event | 2002 Applied Superconductivity Conference - Houston, TX, United States Duration: Aug 4 2002 → Aug 9 2002 |
Keywords
- Buffer layers
- Coated conductors
- Epitaxial films
- Metal surface
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