Growth of CdSxSe1-x thin films by laser evaporation deposition

H. S. Kwok; J. P. Zheng; S. Witanachchi; L. Shi; D. T. Shaw

doi:10.1063/1.99657

Growth of CdS_xSe_1-x thin films by laser evaporation deposition

H. S. Kwok
, J. P. Zheng
, S. Witanachchi
, L. Shi
, D. T. Shaw

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Optical quality thin films of CdS_xSe_1-x were deposited on quartz for various values of x. It was found that these films were polycrystalline in structure, with a high degree of orientation of the c axis. An empirical relationship between the band gap and the lattice constant for the binary system CdS-CdSe was also obtained.

Original language	English
Pages (from-to)	1815-1816
Number of pages	2
Journal	Applied Physics Letters
Volume	52
Issue number	21
DOIs	https://doi.org/10.1063/1.99657
State	Published - 1988

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@article{8a1e8bf5e11b4a0097d43e99943424e4,

title = "Growth of CdSxSe1-x thin films by laser evaporation deposition",

abstract = "Optical quality thin films of CdSxSe1-x were deposited on quartz for various values of x. It was found that these films were polycrystalline in structure, with a high degree of orientation of the c axis. An empirical relationship between the band gap and the lattice constant for the binary system CdS-CdSe was also obtained.",

author = "Kwok, \{H. S.\} and Zheng, \{J. P.\} and S. Witanachchi and L. Shi and Shaw, \{D. T.\}",

year = "1988",

doi = "10.1063/1.99657",

language = "English",

volume = "52",

pages = "1815--1816",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Growth of CdSxSe1-x thin films by laser evaporation deposition

AU - Kwok, H. S.

AU - Zheng, J. P.

AU - Witanachchi, S.

AU - Shi, L.

AU - Shaw, D. T.

PY - 1988

Y1 - 1988

N2 - Optical quality thin films of CdSxSe1-x were deposited on quartz for various values of x. It was found that these films were polycrystalline in structure, with a high degree of orientation of the c axis. An empirical relationship between the band gap and the lattice constant for the binary system CdS-CdSe was also obtained.

AB - Optical quality thin films of CdSxSe1-x were deposited on quartz for various values of x. It was found that these films were polycrystalline in structure, with a high degree of orientation of the c axis. An empirical relationship between the band gap and the lattice constant for the binary system CdS-CdSe was also obtained.

UR - https://www.scopus.com/pages/publications/0010353154

U2 - 10.1063/1.99657

DO - 10.1063/1.99657

M3 - Article

AN - SCOPUS:0010353154

SN - 0003-6951

VL - 52

SP - 1815

EP - 1816

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Growth of CdS_xSe_1-x thin films by laser evaporation deposition

Abstract

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