Growth and properties of ferromagnetic In1-xMnxSb alloys

T. Wojtowicz; W. L. Lim; X. Liu; G. Cywiński; M. Kutrowski; L. V. Titova; K. Yee; M. Dobrowolska; J. K. Furdyna; K. M. Yu; W. Walukiewicz; G. B. Kim; M. Cheon; X. Chen; S. M. Wang; H. Luo; I. Vurgaftman; J. R. Meyer

doi:10.1016/j.physe.2003.08.028

Growth and properties of ferromagnetic In_1-xMn_xSb alloys

T. Wojtowicz
, W. L. Lim
, X. Liu
, G. Cywiński
, M. Kutrowski
, L. V. Titova
, K. Yee
, M. Dobrowolska
, J. K. Furdyna
, K. M. Yu
, W. Walukiewicz
, G. B. Kim
, M. Cheon
, X. Chen
, S. M. Wang
, H. Luo
, I. Vurgaftman
, J. R. Meyer

Physics

University of Notre Dame
Institute of Physics of the Polish Academy of Sciences
Lawrence Berkeley National Laboratory
SUNY Buffalo
Naval Research Laboratory

Research output: Contribution to journal › Conference article › peer-review

33 Scopus citations

Abstract

We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In _1-xMn_xSb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In _1-xMn_xSb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.

Original language	English
Pages (from-to)	325-332
Number of pages	8
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	20
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physe.2003.08.028
State	Published - Jan 2004
Event	Proceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States Duration: Jun 16 2003 → Jun 20 2003

Keywords

Anomalous Hall effect
Ferromagnetic semiconductors
InMnSb
Magnetic circular dichroism
Magnetization
Magneto-optical Kerr effect
PBS
PIXE

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10.1016/j.physe.2003.08.028

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Wojtowicz, T., Lim, W. L., Liu, X., Cywiński, G., Kutrowski, M., Titova, L. V., Yee, K., Dobrowolska, M., Furdyna, J. K., Yu, K. M., Walukiewicz, W., Kim, G. B., Cheon, M., Chen, X., Wang, S. M., Luo, H., Vurgaftman, I., & Meyer, J. R. (2004). Growth and properties of ferromagnetic In_1-xMn_xSb alloys. Physica E: Low-Dimensional Systems and Nanostructures, 20(3-4), 325-332. https://doi.org/10.1016/j.physe.2003.08.028

@article{e36c1981e67a42608492d8a6ee46eca8,

title = "Growth and properties of ferromagnetic In1-xMnxSb alloys",

abstract = "We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In 1-xMnxSb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In 1-xMnxSb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.",

keywords = "Anomalous Hall effect, Ferromagnetic semiconductors, InMnSb, Magnetic circular dichroism, Magnetization, Magneto-optical Kerr effect, PBS, PIXE",

author = "T. Wojtowicz and Lim, \{W. L.\} and X. Liu and G. Cywi{\'n}ski and M. Kutrowski and Titova, \{L. V.\} and K. Yee and M. Dobrowolska and Furdyna, \{J. K.\} and Yu, \{K. M.\} and W. Walukiewicz and Kim, \{G. B.\} and M. Cheon and X. Chen and Wang, \{S. M.\} and H. Luo and I. Vurgaftman and Meyer, \{J. R.\}",

year = "2004",

month = jan,

doi = "10.1016/j.physe.2003.08.028",

language = "English",

volume = "20",

pages = "325--332",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "3-4",

note = "Proceedings of the 11th International Conference on Narrow Gap ; Conference date: 16-06-2003 Through 20-06-2003",

}

Wojtowicz, T, Lim, WL, Liu, X, Cywiński, G, Kutrowski, M, Titova, LV, Yee, K, Dobrowolska, M, Furdyna, JK, Yu, KM, Walukiewicz, W, Kim, GB, Cheon, M, Chen, X, Wang, SM, Luo, H, Vurgaftman, I & Meyer, JR 2004, 'Growth and properties of ferromagnetic In_1-xMn_xSb alloys', Physica E: Low-Dimensional Systems and Nanostructures, vol. 20, no. 3-4, pp. 325-332. https://doi.org/10.1016/j.physe.2003.08.028

TY - JOUR

T1 - Growth and properties of ferromagnetic In1-xMnxSb alloys

AU - Wojtowicz, T.

AU - Lim, W. L.

AU - Liu, X.

AU - Cywiński, G.

AU - Kutrowski, M.

AU - Titova, L. V.

AU - Yee, K.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Kim, G. B.

AU - Cheon, M.

AU - Chen, X.

AU - Wang, S. M.

AU - Luo, H.

AU - Vurgaftman, I.

AU - Meyer, J. R.

PY - 2004/1

Y1 - 2004/1

N2 - We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In 1-xMnxSb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In 1-xMnxSb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.

AB - We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In 1-xMnxSb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In 1-xMnxSb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.

KW - Anomalous Hall effect

KW - Ferromagnetic semiconductors

KW - InMnSb

KW - Magnetic circular dichroism

KW - Magnetization

KW - Magneto-optical Kerr effect

KW - PBS

KW - PIXE

UR - https://www.scopus.com/pages/publications/0346499027

U2 - 10.1016/j.physe.2003.08.028

DO - 10.1016/j.physe.2003.08.028

M3 - Conference article

AN - SCOPUS:0346499027

SN - 1386-9477

VL - 20

SP - 325

EP - 332

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3-4

T2 - Proceedings of the 11th International Conference on Narrow Gap

Y2 - 16 June 2003 through 20 June 2003

ER -

Growth and properties of ferromagnetic In_1-xMn_xSb alloys

Abstract

Keywords

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