Growth and characterization of multi-layer 1.3 μm quantum dot lasers

David Mowbray; Tom Badcock; Ian Sellers; Andrew Ramsay; Maurice Skolnick; Liu Hui-Yun; Mark Hopkinson; Kristian Groom; Richard Hogg; Richard Beanland; David Childs; David Robbins

doi:10.1142/s0219581x07004791

Growth and characterization of multi-layer 1.3 μm quantum dot lasers

David Mowbray
, Tom Badcock
, Ian Sellers
, Andrew Ramsay
, Maurice Skolnick
, Liu Hui-Yun
, Mark Hopkinson
, Kristian Groom
, Richard Hogg
, Richard Beanland
, David Childs
, David Robbins

Department of Electrical Engineering

University of Sheffield
Bookham Technology plc

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The growth and characterization of multi-layer 1.3 μm InAs-GaAs quantum dot lasers is reported. It is demonstrated that the growth of the GaAs spacer layer, placed between the InAs quantum dot layers, must be carefully optimized to prevent defect formation. With optimized growth very low room temperature threshold current density (J_th) devices are obtained. Typical cw values are 32.5 and 17 A cm^-2 for as-grown and HR coated facet devices, respectively. Operation above 100°C is possible. Mechanisms contributing to the temperature sensitivity of J_th above room temperature are discussed. By combining the optimized growth with p-type modulation doping of the QDs both low Jth and high temperature stability of Jth are achieved at room temperature.

Original language	English
Pages (from-to)	291-296
Number of pages	6
Journal	International Journal of Nanoscience
Volume	6
Issue number	3-4
DOIs	https://doi.org/10.1142/s0219581x07004791
State	Published - 2007

Keywords

Modulation doping
Quantum dot lasers
Quantum dots
Self-assembled

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10.1142/s0219581x07004791

Cite this

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title = "Growth and characterization of multi-layer 1.3 μm quantum dot lasers",

abstract = "The growth and characterization of multi-layer 1.3 μm InAs-GaAs quantum dot lasers is reported. It is demonstrated that the growth of the GaAs spacer layer, placed between the InAs quantum dot layers, must be carefully optimized to prevent defect formation. With optimized growth very low room temperature threshold current density (Jth) devices are obtained. Typical cw values are 32.5 and 17 A cm-2 for as-grown and HR coated facet devices, respectively. Operation above 100°C is possible. Mechanisms contributing to the temperature sensitivity of Jth above room temperature are discussed. By combining the optimized growth with p-type modulation doping of the QDs both low Jth and high temperature stability of Jth are achieved at room temperature.",

keywords = "Modulation doping, Quantum dot lasers, Quantum dots, Self-assembled",

author = "David Mowbray and Tom Badcock and Ian Sellers and Andrew Ramsay and Maurice Skolnick and Liu Hui-Yun and Mark Hopkinson and Kristian Groom and Richard Hogg and Richard Beanland and David Childs and David Robbins",

year = "2007",

doi = "10.1142/s0219581x07004791",

language = "English",

volume = "6",

pages = "291--296",

journal = "International Journal of Nanoscience",

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T1 - Growth and characterization of multi-layer 1.3 μm quantum dot lasers

AU - Mowbray, David

AU - Badcock, Tom

AU - Sellers, Ian

AU - Ramsay, Andrew

AU - Skolnick, Maurice

AU - Hui-Yun, Liu

AU - Hopkinson, Mark

AU - Groom, Kristian

AU - Hogg, Richard

AU - Beanland, Richard

AU - Childs, David

AU - Robbins, David

PY - 2007

Y1 - 2007

N2 - The growth and characterization of multi-layer 1.3 μm InAs-GaAs quantum dot lasers is reported. It is demonstrated that the growth of the GaAs spacer layer, placed between the InAs quantum dot layers, must be carefully optimized to prevent defect formation. With optimized growth very low room temperature threshold current density (Jth) devices are obtained. Typical cw values are 32.5 and 17 A cm-2 for as-grown and HR coated facet devices, respectively. Operation above 100°C is possible. Mechanisms contributing to the temperature sensitivity of Jth above room temperature are discussed. By combining the optimized growth with p-type modulation doping of the QDs both low Jth and high temperature stability of Jth are achieved at room temperature.

AB - The growth and characterization of multi-layer 1.3 μm InAs-GaAs quantum dot lasers is reported. It is demonstrated that the growth of the GaAs spacer layer, placed between the InAs quantum dot layers, must be carefully optimized to prevent defect formation. With optimized growth very low room temperature threshold current density (Jth) devices are obtained. Typical cw values are 32.5 and 17 A cm-2 for as-grown and HR coated facet devices, respectively. Operation above 100°C is possible. Mechanisms contributing to the temperature sensitivity of Jth above room temperature are discussed. By combining the optimized growth with p-type modulation doping of the QDs both low Jth and high temperature stability of Jth are achieved at room temperature.

KW - Modulation doping

KW - Quantum dot lasers

KW - Quantum dots

KW - Self-assembled

UR - https://www.scopus.com/pages/publications/35948999244

U2 - 10.1142/s0219581x07004791

DO - 10.1142/s0219581x07004791

M3 - Article

AN - SCOPUS:35948999244

SN - 0219-581X

VL - 6

SP - 291

EP - 296

JO - International Journal of Nanoscience

JF - International Journal of Nanoscience

IS - 3-4

ER -

Growth and characterization of multi-layer 1.3 μm quantum dot lasers

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Keywords

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