Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

H. Luo; N. Samarth; A. Yin; A. Pareek; M. Dobrowolska; J. K. Furdyna; K. Mahalingam; N. Otsuka; F. C. Peiris; J. R. Buschert

doi:10.1007/BF02661615

Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

H. Luo
, N. Samarth
, A. Yin
, A. Pareek
, M. Dobrowolska
, J. K. Furdyna
, K. Mahalingam
, N. Otsuka
, F. C. Peiris
, J. R. Buschert

Physics

University of Notre Dame
Purdue University
Goshen College

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.

Original language	English
Pages (from-to)	467-471
Number of pages	5
Journal	Journal of Electronic Materials
Volume	22
Issue number	5
DOIs	https://doi.org/10.1007/BF02661615
State	Published - May 1993

Keywords

CdSe/ZnSe
migration enhanced epitaxy
molecular beam epitaxy
quantum wells

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10.1007/BF02661615

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title = "Growth and characterization of digital alloy quantum wells of CdSe/ZnSe",

abstract = "We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.",

keywords = "CdSe/ZnSe, migration enhanced epitaxy, molecular beam epitaxy, quantum wells",

author = "H. Luo and N. Samarth and A. Yin and A. Pareek and M. Dobrowolska and Furdyna, \{J. K.\} and K. Mahalingam and N. Otsuka and Peiris, \{F. C.\} and Buschert, \{J. R.\}",

year = "1993",

month = may,

doi = "10.1007/BF02661615",

language = "English",

volume = "22",

pages = "467--471",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

AU - Luo, H.

AU - Samarth, N.

AU - Yin, A.

AU - Pareek, A.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

AU - Mahalingam, K.

AU - Otsuka, N.

AU - Peiris, F. C.

AU - Buschert, J. R.

PY - 1993/5

Y1 - 1993/5

N2 - We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.

AB - We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.

KW - CdSe/ZnSe

KW - migration enhanced epitaxy

KW - molecular beam epitaxy

KW - quantum wells

UR - https://www.scopus.com/pages/publications/51249162138

U2 - 10.1007/BF02661615

DO - 10.1007/BF02661615

M3 - Article

AN - SCOPUS:51249162138

SN - 0361-5235

VL - 22

SP - 467

EP - 471

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

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Keywords

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