Growth and characterization of Ba0.6Sr0.4TiO 3 thin films on Si with Pt electrodes

L. Kinder; X. F. Zhang; I. L. Grigorov; C. Kwon; Q. X. Jia; L. Luo; J. Zhao

doi:10.1116/1.582098

Growth and characterization of Ba_0.6Sr_0.4TiO ₃ thin films on Si with Pt electrodes

L. Kinder
, X. F. Zhang
, I. L. Grigorov
, C. Kwon
, Q. X. Jia
, L. Luo
, J. Zhao

Department of Materials Design and Innovation

Los Alamos National Laboratory
Applied Materials Incorporated

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Both metalorganic chemical vapor deposition and pulsed laser deposition have been used to grow Ba_0.6Sr_0.4TiO₃ (BST) thin films on Si with Pt electrodes. The smoother Pt electrodes allow the BST to grow with greater crystallinity. Thin film Pt/BST/Pt capacitors with a dielectric thickness of around 170 nm show dielectric constants over 400 and dielectric losses in the range of 0.01-0.03 at 10 kHz. The electric/dielectric properties of the BST films are further improved by first depositing a 27 nm BST seed layer by metalorganic chemical vapor deposition followed by a 145 nm BST layer deposited by pulsed laser deposition.

Original language	English
Pages (from-to)	2148-2150
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	17
Issue number	4
DOIs	https://doi.org/10.1116/1.582098
State	Published - 1999

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title = "Growth and characterization of Ba0.6Sr0.4TiO 3 thin films on Si with Pt electrodes",

abstract = "Both metalorganic chemical vapor deposition and pulsed laser deposition have been used to grow Ba0.6Sr0.4TiO3 (BST) thin films on Si with Pt electrodes. The smoother Pt electrodes allow the BST to grow with greater crystallinity. Thin film Pt/BST/Pt capacitors with a dielectric thickness of around 170 nm show dielectric constants over 400 and dielectric losses in the range of 0.01-0.03 at 10 kHz. The electric/dielectric properties of the BST films are further improved by first depositing a 27 nm BST seed layer by metalorganic chemical vapor deposition followed by a 145 nm BST layer deposited by pulsed laser deposition.",

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year = "1999",

doi = "10.1116/1.582098",

language = "English",

volume = "17",

pages = "2148--2150",

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T1 - Growth and characterization of Ba0.6Sr0.4TiO 3 thin films on Si with Pt electrodes

AU - Kinder, L.

AU - Zhang, X. F.

AU - Grigorov, I. L.

AU - Kwon, C.

AU - Jia, Q. X.

AU - Luo, L.

AU - Zhao, J.

PY - 1999

Y1 - 1999

N2 - Both metalorganic chemical vapor deposition and pulsed laser deposition have been used to grow Ba0.6Sr0.4TiO3 (BST) thin films on Si with Pt electrodes. The smoother Pt electrodes allow the BST to grow with greater crystallinity. Thin film Pt/BST/Pt capacitors with a dielectric thickness of around 170 nm show dielectric constants over 400 and dielectric losses in the range of 0.01-0.03 at 10 kHz. The electric/dielectric properties of the BST films are further improved by first depositing a 27 nm BST seed layer by metalorganic chemical vapor deposition followed by a 145 nm BST layer deposited by pulsed laser deposition.

AB - Both metalorganic chemical vapor deposition and pulsed laser deposition have been used to grow Ba0.6Sr0.4TiO3 (BST) thin films on Si with Pt electrodes. The smoother Pt electrodes allow the BST to grow with greater crystallinity. Thin film Pt/BST/Pt capacitors with a dielectric thickness of around 170 nm show dielectric constants over 400 and dielectric losses in the range of 0.01-0.03 at 10 kHz. The electric/dielectric properties of the BST films are further improved by first depositing a 27 nm BST seed layer by metalorganic chemical vapor deposition followed by a 145 nm BST layer deposited by pulsed laser deposition.

UR - https://www.scopus.com/pages/publications/0000306308

U2 - 10.1116/1.582098

DO - 10.1116/1.582098

M3 - Article

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SN - 0734-2101

VL - 17

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EP - 2150

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Growth and characterization of Ba_0.6Sr_0.4TiO ₃ thin films on Si with Pt electrodes

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