Growth and characterization of 1.3μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers

I. R. Sellers; H. Y. Liu; D. J. Mowbray; T. J. Badcock; K. M. Groom; M. Hopkinson; M. Gutiérrez; M. S. Skolnick; R. Beanland; D. T. Childs; D. J. Robbins

doi:10.1063/1.1994706

Growth and characterization of 1.3μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers

I. R. Sellers
, H. Y. Liu
, D. J. Mowbray
, T. J. Badcock
, K. M. Groom
, M. Hopkinson
, M. Gutiérrez
, M. S. Skolnick
, R. Beanland
, D. T. Childs
, D. J. Robbins

Department of Electrical Engineering

University of Sheffield
Bookham Technology plc

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The use of high growth temperature GaAs spacer layers is shown to significantly improve the performance of 1.3μm multi-layer quantum dot lasers by preventing the formation of threading dislocations. As-cleaved devices exhibit a cw room temperature (300K) threshold current density (J_th) of 39 Acm^-2 and operate up to 105°C. High reflectivity coated facet devices operate at 300K with a cw J_th of 17 Acm^-2.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	1547-1548
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994706
State	Published - Jun 30 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	07/26/04 → 07/30/04

Access to Document

10.1063/1.1994706

Cite this

Sellers, I. R., Liu, H. Y., Mowbray, D. J., Badcock, T. J., Groom, K. M., Hopkinson, M., Gutiérrez, M., Skolnick, M. S., Beanland, R., Childs, D. T., & Robbins, D. J. (2005). Growth and characterization of 1.3μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 1547-1548). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994706

@inproceedings{d96e2ec23eec409b91528039a6d8617c,

title = "Growth and characterization of 1.3μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers",

abstract = "The use of high growth temperature GaAs spacer layers is shown to significantly improve the performance of 1.3μm multi-layer quantum dot lasers by preventing the formation of threading dislocations. As-cleaved devices exhibit a cw room temperature (300K) threshold current density (Jth) of 39 Acm-2 and operate up to 105°C. High reflectivity coated facet devices operate at 300K with a cw Jth of 17 Acm-2.",

author = "Sellers, \{I. R.\} and Liu, \{H. Y.\} and Mowbray, \{D. J.\} and Badcock, \{T. J.\} and Groom, \{K. M.\} and M. Hopkinson and M. Guti{\'e}rrez and Skolnick, \{M. S.\} and R. Beanland and Childs, \{D. T.\} and Robbins, \{D. J.\}",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994706",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "1547--1548",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

Sellers, IR, Liu, HY, Mowbray, DJ, Badcock, TJ, Groom, KM, Hopkinson, M, Gutiérrez, M, Skolnick, MS, Beanland, R, Childs, DT & Robbins, DJ 2005, Growth and characterization of 1.3μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 1547-1548, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 07/26/04. https://doi.org/10.1063/1.1994706

Growth and characterization of 1.3μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers. / Sellers, I. R.; Liu, H. Y.; Mowbray, D. J. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 1547-1548 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth and characterization of 1.3μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers

AU - Sellers, I. R.

AU - Liu, H. Y.

AU - Mowbray, D. J.

AU - Badcock, T. J.

AU - Groom, K. M.

AU - Hopkinson, M.

AU - Gutiérrez, M.

AU - Skolnick, M. S.

AU - Beanland, R.

AU - Childs, D. T.

AU - Robbins, D. J.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - The use of high growth temperature GaAs spacer layers is shown to significantly improve the performance of 1.3μm multi-layer quantum dot lasers by preventing the formation of threading dislocations. As-cleaved devices exhibit a cw room temperature (300K) threshold current density (Jth) of 39 Acm-2 and operate up to 105°C. High reflectivity coated facet devices operate at 300K with a cw Jth of 17 Acm-2.

AB - The use of high growth temperature GaAs spacer layers is shown to significantly improve the performance of 1.3μm multi-layer quantum dot lasers by preventing the formation of threading dislocations. As-cleaved devices exhibit a cw room temperature (300K) threshold current density (Jth) of 39 Acm-2 and operate up to 105°C. High reflectivity coated facet devices operate at 300K with a cw Jth of 17 Acm-2.

UR - https://www.scopus.com/pages/publications/33749476357

U2 - 10.1063/1.1994706

DO - 10.1063/1.1994706

M3 - Conference contribution

AN - SCOPUS:33749476357

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 1547

EP - 1548

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

Sellers IR, Liu HY, Mowbray DJ, Badcock TJ, Groom KM, Hopkinson M et al. Growth and characterization of 1.3μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 1547-1548. (AIP Conference Proceedings). doi: 10.1063/1.1994706

Growth and characterization of 1.3μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers

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