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Graphene-induced strong quenching of optical phonons in III-V semiconductor heterostructures

  • Sandia National Laboratories, New Mexico

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We demonstrate that monolayer graphene transferred onto III-V semiconductor heterostructures induces strong quenching of the optical phonons in III-V semiconductor epilayers. Such graphene-induced optical phonon quenching is even stronger than that of thin metal films.

Original languageEnglish
Title of host publication2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781943580279
DOIs
StatePublished - Oct 25 2017
Event2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States
Duration: May 14 2017May 19 2017

Publication series

Name2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
Volume2017-January

Conference

Conference2017 Conference on Lasers and Electro-Optics, CLEO 2017
Country/TerritoryUnited States
CitySan Jose
Period05/14/1705/19/17

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