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Graphene-Based Terahertz Devices: Concepts and Characteristics

  • V. Ryzhii
  • , M. Ryzhii
  • , A. Satou
  • , N. Ryabova
  • , T. Otsuji
  • , V. Mitin
  • , F. T. Vasko
  • , A. A. Dubinov
  • , V. Y. Aleshkin
  • , M. S. Shur
  • The University of Aizu
  • Tohoku University
  • NASU - Institute of Semiconductors Physics
  • Russian Academy of Sciences
  • Rensselaer Polytechnic Institute

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

5 Scopus citations
Original languageEnglish
Title of host publicationFuture Trends in Microelectronics
Subtitle of host publicationFrom Nanophotonics to Sensors and Energy
PublisherJohn Wiley and Sons
Pages293-306
Number of pages14
ISBN (Print)9780470551370
DOIs
StatePublished - Aug 18 2010

Keywords

  • Electron population
  • Gapless energy spectra
  • Graphene layer
  • Nano electromechanical devices
  • Terahertz devices

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