Graphene-based 2D-heterostructures for terahertz lasers and amplifiers

D. Yadav; S. Boubanga-Tombet; A. Satou; T. Tamamushi; T. Watanabe; T. Suemitsu; H. Fukidome; M. Suemitsu; A. A. Dubinov; V. V. Popov; M. Ryzhii; V. Mitin; M. S. Shur; V. Ryzhii; T. Otsuji

doi:10.1117/12.2516494

Graphene-based 2D-heterostructures for terahertz lasers and amplifiers

D. Yadav
, S. Boubanga-Tombet
, A. Satou
, T. Tamamushi
, T. Watanabe
, T. Suemitsu
, H. Fukidome
, M. Suemitsu
, A. A. Dubinov
, V. V. Popov
, M. Ryzhii
, V. Mitin
, M. S. Shur
, V. Ryzhii
, T. Otsuji

Department of Electrical Engineering

Tohoku University
Russian Academy of Sciences
RAS
The University of Aizu
Rensselaer Polytechnic Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper reviews recent advances in the terahertz (THz) graphene-based 2D-heterostructure lasers and amplifiers. The linear gapless graphene energy spectrum enables population inversion under optical and electrical pumping giving rise to the negative dynamic conductivity in a wide THz frequency range. We first theoretically discovered these phenomena and recently reported on the experimental observation of the amplified spontaneous THz emission and single-mode THz lasing at 100K in the current-injection pumped graphene-channel field-effect transistors (GFETs) with a distributedfeedback dual-gate structure. We also observed the light amplification of stimulated emission of THz radiation driven by graphene-plasmon instability in the asymmetric dual-grating gate (ADGG) GFETs by using a THz time-domain spectroscopy technique. Integrating the graphene surface plasmon polariton (SPP) oscillator into a current-injection graphene THz laser transistor is the most promising approach towards room-temperature intense THz lasing.

Original language	English
Title of host publication	Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII
Editors	Tianxin Yang, Laurence P. Sadwick
Publisher	SPIE
ISBN (Electronic)	9781510624764
DOIs	https://doi.org/10.1117/12.2516494
State	Published - 2019
Event	Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII 2019 - San Francisco, United States Duration: Feb 4 2019 → Feb 7 2019

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10917
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII 2019
Country/Territory	United States
City	San Francisco
Period	02/4/19 → 02/7/19

Keywords

2D materials
Amplifier
Graphene
Heterostructures
Laser
Terahertz

Access to Document

10.1117/12.2516494

Cite this

Yadav, D., Boubanga-Tombet, S., Satou, A., Tamamushi, T., Watanabe, T., Suemitsu, T., Fukidome, H., Suemitsu, M., Dubinov, A. A., Popov, V. V., Ryzhii, M., Mitin, V., Shur, M. S., Ryzhii, V., & Otsuji, T. (2019). Graphene-based 2D-heterostructures for terahertz lasers and amplifiers. In T. Yang, & L. P. Sadwick (Eds.), Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII Article 109170G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10917). SPIE. https://doi.org/10.1117/12.2516494

@inproceedings{1890bbebff634ca6adaa1560c25f74f9,

title = "Graphene-based 2D-heterostructures for terahertz lasers and amplifiers",

abstract = "This paper reviews recent advances in the terahertz (THz) graphene-based 2D-heterostructure lasers and amplifiers. The linear gapless graphene energy spectrum enables population inversion under optical and electrical pumping giving rise to the negative dynamic conductivity in a wide THz frequency range. We first theoretically discovered these phenomena and recently reported on the experimental observation of the amplified spontaneous THz emission and single-mode THz lasing at 100K in the current-injection pumped graphene-channel field-effect transistors (GFETs) with a distributedfeedback dual-gate structure. We also observed the light amplification of stimulated emission of THz radiation driven by graphene-plasmon instability in the asymmetric dual-grating gate (ADGG) GFETs by using a THz time-domain spectroscopy technique. Integrating the graphene surface plasmon polariton (SPP) oscillator into a current-injection graphene THz laser transistor is the most promising approach towards room-temperature intense THz lasing.",

keywords = "2D materials, Amplifier, Graphene, Heterostructures, Laser, Terahertz",

author = "D. Yadav and S. Boubanga-Tombet and A. Satou and T. Tamamushi and T. Watanabe and T. Suemitsu and H. Fukidome and M. Suemitsu and Dubinov, \{A. A.\} and Popov, \{V. V.\} and M. Ryzhii and V. Mitin and Shur, \{M. S.\} and V. Ryzhii and T. Otsuji",

note = "Publisher Copyright: {\textcopyright} 2019 SPIE.; Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII 2019 ; Conference date: 04-02-2019 Through 07-02-2019",

year = "2019",

doi = "10.1117/12.2516494",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Tianxin Yang and Sadwick, \{Laurence P.\}",

booktitle = "Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII",

address = "United States",

}

Yadav, D, Boubanga-Tombet, S, Satou, A, Tamamushi, T, Watanabe, T, Suemitsu, T, Fukidome, H, Suemitsu, M, Dubinov, AA, Popov, VV, Ryzhii, M, Mitin, V, Shur, MS, Ryzhii, V & Otsuji, T 2019, Graphene-based 2D-heterostructures for terahertz lasers and amplifiers. in T Yang & LP Sadwick (eds), Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII., 109170G, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10917, SPIE, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII 2019, San Francisco, United States, 02/4/19. https://doi.org/10.1117/12.2516494

Graphene-based 2D-heterostructures for terahertz lasers and amplifiers. / Yadav, D.; Boubanga-Tombet, S.; Satou, A. et al.
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII. ed. / Tianxin Yang; Laurence P. Sadwick. SPIE, 2019. 109170G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10917).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Graphene-based 2D-heterostructures for terahertz lasers and amplifiers

AU - Yadav, D.

AU - Boubanga-Tombet, S.

AU - Satou, A.

AU - Tamamushi, T.

AU - Watanabe, T.

AU - Suemitsu, T.

AU - Fukidome, H.

AU - Suemitsu, M.

AU - Dubinov, A. A.

AU - Popov, V. V.

AU - Ryzhii, M.

AU - Mitin, V.

AU - Shur, M. S.

AU - Ryzhii, V.

AU - Otsuji, T.

PY - 2019

Y1 - 2019

N2 - This paper reviews recent advances in the terahertz (THz) graphene-based 2D-heterostructure lasers and amplifiers. The linear gapless graphene energy spectrum enables population inversion under optical and electrical pumping giving rise to the negative dynamic conductivity in a wide THz frequency range. We first theoretically discovered these phenomena and recently reported on the experimental observation of the amplified spontaneous THz emission and single-mode THz lasing at 100K in the current-injection pumped graphene-channel field-effect transistors (GFETs) with a distributedfeedback dual-gate structure. We also observed the light amplification of stimulated emission of THz radiation driven by graphene-plasmon instability in the asymmetric dual-grating gate (ADGG) GFETs by using a THz time-domain spectroscopy technique. Integrating the graphene surface plasmon polariton (SPP) oscillator into a current-injection graphene THz laser transistor is the most promising approach towards room-temperature intense THz lasing.

AB - This paper reviews recent advances in the terahertz (THz) graphene-based 2D-heterostructure lasers and amplifiers. The linear gapless graphene energy spectrum enables population inversion under optical and electrical pumping giving rise to the negative dynamic conductivity in a wide THz frequency range. We first theoretically discovered these phenomena and recently reported on the experimental observation of the amplified spontaneous THz emission and single-mode THz lasing at 100K in the current-injection pumped graphene-channel field-effect transistors (GFETs) with a distributedfeedback dual-gate structure. We also observed the light amplification of stimulated emission of THz radiation driven by graphene-plasmon instability in the asymmetric dual-grating gate (ADGG) GFETs by using a THz time-domain spectroscopy technique. Integrating the graphene surface plasmon polariton (SPP) oscillator into a current-injection graphene THz laser transistor is the most promising approach towards room-temperature intense THz lasing.

KW - 2D materials

KW - Amplifier

KW - Graphene

KW - Heterostructures

KW - Laser

KW - Terahertz

UR - https://www.scopus.com/pages/publications/85066028149

U2 - 10.1117/12.2516494

DO - 10.1117/12.2516494

M3 - Conference contribution

AN - SCOPUS:85066028149

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII

A2 - Yang, Tianxin

A2 - Sadwick, Laurence P.

PB - SPIE

T2 - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII 2019

Y2 - 4 February 2019 through 7 February 2019

ER -

Yadav D, Boubanga-Tombet S, Satou A, Tamamushi T, Watanabe T, Suemitsu T et al. Graphene-based 2D-heterostructures for terahertz lasers and amplifiers. In Yang T, Sadwick LP, editors, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII. SPIE. 2019. 109170G. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2516494

Graphene-based 2D-heterostructures for terahertz lasers and amplifiers

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