Abstract
A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.
| Original language | English |
|---|---|
| Article number | 22 |
| Pages (from-to) | 1-8 |
| Number of pages | 8 |
| Journal | Nanoscale Research Letters |
| Volume | 8 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2013 |
Keywords
- Ambient condition
- Bolometric effect
- Frequency response
- Graphene
- Microwave application
- Nonlinear effect
- Terahertz detection
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