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GR-FET application for high-frequency detection device

  • Akram M. Mahjoub
  • , Alec Nicol
  • , Takuto Abe
  • , Takahiro Ouchi
  • , Yuhei Iso
  • , Michio Kida
  • , Noboyuki Aoki
  • , Katsuhiko Miyamoto
  • , Takashige Omatsu
  • , Jonathan P. Bird
  • , David K. Ferry
  • , Koji Ishibashi
  • , Yuichi Ochiai
  • Chiba University
  • University of Minnesota Twin Cities
  • Arizona State University
  • RIKEN

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.

Original languageEnglish
Article number22
Pages (from-to)1-8
Number of pages8
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 2013

Keywords

  • Ambient condition
  • Bolometric effect
  • Frequency response
  • Graphene
  • Microwave application
  • Nonlinear effect
  • Terahertz detection

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