Abstract
We investigate the effect of magnetic fields on the intensity of photoluminescence in GaAs-AIGaAs n-type modulation-doped multiple quantum well heterostructures. An overall increase in luminescence is observed with increasing axial field. Large oscillations in the intensity occur whose peaks and valleys are approximately periodic in 1/B. They cannot be correlated with Shubnikov-de Haas oscillations but possibly show an empirical relation with Landau level crossings of the lowest unoccupied subband states.
| Original language | English |
|---|---|
| Pages (from-to) | 136-142 |
| Number of pages | 7 |
| Journal | Surface Science |
| Volume | 174 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Aug 3 1986 |
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