Generation-recombination noise of hot carriers in semiconductors

Lino Reggiani; Paolo Lugli; Vladimir Mitin

doi:10.1016/0038-1101(88)90337-1

Generation-recombination noise of hot carriers in semiconductors

Lino Reggiani
, Paolo Lugli
, Vladimir Mitin

Department of Electrical Engineering

University of Modena and Reggio Emilia

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. An exact decomposition procedure of the current spectral density evidences the importance of a cross-correlation contribution coming from velocity and number fluctuations.

Original language	English
Pages (from-to)	543-546
Number of pages	4
Journal	Solid State Electronics
Volume	31
Issue number	3-4
DOIs	https://doi.org/10.1016/0038-1101(88)90337-1
State	Published - 1988

Keywords

Electronic transport
Monte Carlo method
noise and fluctuations
scattering mechanisms
semiconductors

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10.1016/0038-1101(88)90337-1

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title = "Generation-recombination noise of hot carriers in semiconductors",

abstract = "We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. An exact decomposition procedure of the current spectral density evidences the importance of a cross-correlation contribution coming from velocity and number fluctuations.",

keywords = "Electronic transport, Monte Carlo method, noise and fluctuations, scattering mechanisms, semiconductors",

author = "Lino Reggiani and Paolo Lugli and Vladimir Mitin",

year = "1988",

doi = "10.1016/0038-1101(88)90337-1",

language = "English",

volume = "31",

pages = "543--546",

journal = "Solid State Electronics",

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T1 - Generation-recombination noise of hot carriers in semiconductors

AU - Reggiani, Lino

AU - Lugli, Paolo

AU - Mitin, Vladimir

PY - 1988

Y1 - 1988

N2 - We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. An exact decomposition procedure of the current spectral density evidences the importance of a cross-correlation contribution coming from velocity and number fluctuations.

AB - We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. An exact decomposition procedure of the current spectral density evidences the importance of a cross-correlation contribution coming from velocity and number fluctuations.

KW - Electronic transport

KW - Monte Carlo method

KW - noise and fluctuations

KW - scattering mechanisms

KW - semiconductors

UR - https://www.scopus.com/pages/publications/0023980910

U2 - 10.1016/0038-1101(88)90337-1

DO - 10.1016/0038-1101(88)90337-1

M3 - Article

AN - SCOPUS:0023980910

SN - 0038-1101

VL - 31

SP - 543

EP - 546

JO - Solid State Electronics

JF - Solid State Electronics

IS - 3-4

ER -

Generation-recombination noise of hot carriers in semiconductors

Abstract

Keywords

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