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Generation-recombination dynamics via acoustic phonons in a disordered graphene

  • SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Generation-recombination interband transitions via acoustic phonons are allowed in a disordered graphene because of violation of the energy-momentum conservation requirements. The generation-recombination dynamics of concentration is analyzed based on the quasi-equilibrium approach for the scattering by a short-range disorder and for the deformation interaction of carriers with in-plane acoustic modes. The transient evolution of non-equilibrium carriers is described by the exponential fit dependent on doping conditions and disorder level. The characteristic relaxation time is estimated to be about 150 ns at room temperature for a sample with the maximal sheet resistance ∼5kΩ.

Original languageEnglish
Title of host publication15th International Conference on Narrow Gap Systems, NGS15
Pages181-183
Number of pages3
DOIs
StatePublished - 2011
Event15th International Conference on Narrow Gap Systems, NGS15 - Blacksburg, VA, United States
Duration: Aug 1 2011 → Aug 5 2011

Publication series

NameAIP Conference Proceedings
Volume1416
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference15th International Conference on Narrow Gap Systems, NGS15
Country/TerritoryUnited States
CityBlacksburg, VA
Period08/1/11 → 08/5/11

Keywords

  • Acoustic Phonons
  • Graphene
  • Recombination

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