Abstract
The use of hot carriers to enhance the ionization process to obtain low-noise avalanche photodiodes is considered. The results of theoretical calculations of noise vs. gain are presented. The implications for materials requirements are considered.
| Original language | English |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Publisher | Optical Soc of America |
| Pages | 166-167 |
| Number of pages | 2 |
| ISBN (Print) | 0936659491 |
| State | Published - 1987 |
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