Ge/GaAs thin films for thermometer and bolometer application

V. F. Mitin; P. M. Lytvyn; V. V. Kholevchuk; V. V. Mitin; E. F. Venger; O. A. Mironov

doi:10.1109/ELNANO.2013.6552037

Ge/GaAs thin films for thermometer and bolometer application

V. F. Mitin
, P. M. Lytvyn
, V. V. Kholevchuk
, V. V. Mitin
, E. F. Venger
, O. A. Mironov

Department of Electrical Engineering

NASU - Institute of Semiconductors Physics
University of Warwick
International Laboratory of High Magnetic Fields Low Temperatures in Wroclaw of the Polish Academy of Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate that the heavily doped and completely compensated Ge thin films on semi-insulating GaAs substrates are very promising for bolometer and thermoresistor application in the 250 K to 500 K temperature range. These films have single-crystal structure, the pronounced nano-relief surface and compositional nano-inhomogeneities. The conductivity of such films is two-dimensional percolation of charge carriers through a fluctuating electrostatic potential.

Original language	English
Title of host publication	2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings
Pages	56-60
Number of pages	5
DOIs	https://doi.org/10.1109/ELNANO.2013.6552037
State	Published - 2013
Event	2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Kyiv, Ukraine Duration: Apr 16 2013 → Apr 19 2013

Publication series

Name	2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings

Conference

Conference	2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013
Country/Territory	Ukraine
City	Kyiv
Period	04/16/13 → 04/19/13

Keywords

bolometers
Ge/GaAs
heavily doped and strongly compensated semiconductors
percolation
thermometers

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10.1109/ELNANO.2013.6552037

Cite this

Mitin, V. F., Lytvyn, P. M., Kholevchuk, V. V., Mitin, V. V., Venger, E. F., & Mironov, O. A. (2013). Ge/GaAs thin films for thermometer and bolometer application. In 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings (pp. 56-60). Article 6552037 (2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings). https://doi.org/10.1109/ELNANO.2013.6552037

Mitin, V. F. ; Lytvyn, P. M. ; Kholevchuk, V. V. et al. / Ge/GaAs thin films for thermometer and bolometer application. 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings. 2013. pp. 56-60 (2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings).

@inproceedings{f09376ea378f46beaaa4c3a684112bb5,

title = "Ge/GaAs thin films for thermometer and bolometer application",

abstract = "We demonstrate that the heavily doped and completely compensated Ge thin films on semi-insulating GaAs substrates are very promising for bolometer and thermoresistor application in the 250 K to 500 K temperature range. These films have single-crystal structure, the pronounced nano-relief surface and compositional nano-inhomogeneities. The conductivity of such films is two-dimensional percolation of charge carriers through a fluctuating electrostatic potential.",

keywords = "bolometers, Ge/GaAs, heavily doped and strongly compensated semiconductors, percolation, thermometers",

author = "Mitin, \{V. F.\} and Lytvyn, \{P. M.\} and Kholevchuk, \{V. V.\} and Mitin, \{V. V.\} and Venger, \{E. F.\} and Mironov, \{O. A.\}",

year = "2013",

doi = "10.1109/ELNANO.2013.6552037",

language = "English",

isbn = "9781467346726",

series = "2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings",

pages = "56--60",

booktitle = "2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings",

note = "2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 ; Conference date: 16-04-2013 Through 19-04-2013",

}

Mitin, VF, Lytvyn, PM, Kholevchuk, VV, Mitin, VV, Venger, EF & Mironov, OA 2013, Ge/GaAs thin films for thermometer and bolometer application. in 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings., 6552037, 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings, pp. 56-60, 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013, Kyiv, Ukraine, 04/16/13. https://doi.org/10.1109/ELNANO.2013.6552037

Ge/GaAs thin films for thermometer and bolometer application. / Mitin, V. F.; Lytvyn, P. M.; Kholevchuk, V. V. et al.
2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings. 2013. p. 56-60 6552037 (2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ge/GaAs thin films for thermometer and bolometer application

AU - Mitin, V. F.

AU - Lytvyn, P. M.

AU - Kholevchuk, V. V.

AU - Mitin, V. V.

AU - Venger, E. F.

AU - Mironov, O. A.

PY - 2013

Y1 - 2013

N2 - We demonstrate that the heavily doped and completely compensated Ge thin films on semi-insulating GaAs substrates are very promising for bolometer and thermoresistor application in the 250 K to 500 K temperature range. These films have single-crystal structure, the pronounced nano-relief surface and compositional nano-inhomogeneities. The conductivity of such films is two-dimensional percolation of charge carriers through a fluctuating electrostatic potential.

AB - We demonstrate that the heavily doped and completely compensated Ge thin films on semi-insulating GaAs substrates are very promising for bolometer and thermoresistor application in the 250 K to 500 K temperature range. These films have single-crystal structure, the pronounced nano-relief surface and compositional nano-inhomogeneities. The conductivity of such films is two-dimensional percolation of charge carriers through a fluctuating electrostatic potential.

KW - bolometers

KW - Ge/GaAs

KW - heavily doped and strongly compensated semiconductors

KW - percolation

KW - thermometers

UR - https://www.scopus.com/pages/publications/84881393249

U2 - 10.1109/ELNANO.2013.6552037

DO - 10.1109/ELNANO.2013.6552037

M3 - Conference contribution

AN - SCOPUS:84881393249

SN - 9781467346726

T3 - 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings

SP - 56

EP - 60

BT - 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings

T2 - 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013

Y2 - 16 April 2013 through 19 April 2013

ER -

Mitin VF, Lytvyn PM, Kholevchuk VV, Mitin VV, Venger EF, Mironov OA. Ge/GaAs thin films for thermometer and bolometer application. In 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings. 2013. p. 56-60. 6552037. (2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings). doi: 10.1109/ELNANO.2013.6552037

Ge/GaAs thin films for thermometer and bolometer application

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