Gated negative-effective-mass ballistic terahertz generators

We consider gate control of terahertz generation in planar ballistic diodes with a negative-effective-mass section in a dispersion relation of current carriers in a current-conducting channel. Such a generation in ballistic p⁺ pp⁺ or n⁺ nn⁺ diodes occurs as a result of plasma instability development and self-organization of a regular oscillation regime. Conditions of existence and oscillation frequencies are calculated. The gate can also serve as an oscillation-collecting electrode. We consider double-gate designs, side by side with conventional single-gate designs. The double-gate devices allow us to separate circuits for direct and high-frequency currents.