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Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

  • He Liu
  • , Ting Zhang
  • , Ke Wang
  • , Fei Gao
  • , Gang Xu
  • , Xin Zhang
  • , Shu Xiao Li
  • , Gang Cao
  • , Ting Wang
  • , Jianjun Zhang
  • , Xuedong Hu
  • , Hai Ou Li
  • , Guo Ping Guo
  • University of Science and Technology of China
  • Chinese Academy of Sciences
  • Origin Quantum Computing Company Limited

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here, we experimentally demonstrate a tunable SOI in a double quantum dot in a germanium (Ge) hut wire (HW), which could help to enable fast all-electric spin manipulations while suppressing unwanted decoherence. Specifically, we measure the transport spectra in the Pauli-spin-blockade regime in the double-quantum-dot device. By adjusting the interdot tunnel coupling, we obtain an electric-field-tuned spin-orbit length of lSO= 2.0-48.9 nm. This tunability of the SOI could pave the way toward the realization of high-fidelity qubits in Ge HW systems.

Original languageEnglish
Article number044052
JournalPhysical Review Applied
Volume17
Issue number4
DOIs
StatePublished - Apr 2022

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