Gate-controlled Schottky barrier modulation for superior photoresponse of MoS2 field effect transistor

Hua Min Li; Dae Yeong Lee; Min Sup Choi; De Shun Qu; Xiao Chi Liu; Chang Ho Ra; Won Jong Yoo

doi:10.1109/IEDM.2013.6724662

Gate-controlled Schottky barrier modulation for superior photoresponse of MoS₂ field effect transistor

Hua Min Li
, Dae Yeong Lee
, Min Sup Choi
, De Shun Qu
, Xiao Chi Liu
, Chang Ho Ra
, Won Jong Yoo

Department of Electrical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

An ultrahigh photocurrent (PC) signal which was about thousand times higher compared to the corresponding dark current was achieved in a two-dimensional (2D) multi-layer MoS₂ field effect transistor (FET), owing to a gate-controlled MoS₂/Ti/Au Schottky barrier (SB) modulation. The SBs can be enlarged for suppressing the electron drift along the channel in dark environment, and be reduced for the collection of photo-excited charge carriers in illuminating environment, providing the great potential for 2D electronic and optoelectronic applications.

Original language	English
Title of host publication	2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages	19.6.1-19.6.4
DOIs	https://doi.org/10.1109/IEDM.2013.6724662
State	Published - 2013
Event	2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States Duration: Dec 9 2013 → Dec 11 2013

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/Territory	United States
City	Washington, DC
Period	12/9/13 → 12/11/13

Access to Document

10.1109/IEDM.2013.6724662

Cite this

Li, H. M., Lee, D. Y., Choi, M. S., Qu, D. S., Liu, X. C., Ra, C. H., & Yoo, W. J. (2013). Gate-controlled Schottky barrier modulation for superior photoresponse of MoS₂ field effect transistor. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 19.6.1-19.6.4). Article 6724662 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724662

@inproceedings{7141a0a219f94bc8ba33915b39918d3b,

title = "Gate-controlled Schottky barrier modulation for superior photoresponse of MoS2 field effect transistor",

abstract = "An ultrahigh photocurrent (PC) signal which was about thousand times higher compared to the corresponding dark current was achieved in a two-dimensional (2D) multi-layer MoS2 field effect transistor (FET), owing to a gate-controlled MoS2/Ti/Au Schottky barrier (SB) modulation. The SBs can be enlarged for suppressing the electron drift along the channel in dark environment, and be reduced for the collection of photo-excited charge carriers in illuminating environment, providing the great potential for 2D electronic and optoelectronic applications.",

author = "Li, \{Hua Min\} and Lee, \{Dae Yeong\} and Choi, \{Min Sup\} and Qu, \{De Shun\} and Liu, \{Xiao Chi\} and Ra, \{Chang Ho\} and Yoo, \{Won Jong\}",

year = "2013",

doi = "10.1109/IEDM.2013.6724662",

language = "English",

isbn = "9781479923076",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "19.6.1--19.6.4",

booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",

note = "2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",

}

Li, HM, Lee, DY, Choi, MS, Qu, DS, Liu, XC, Ra, CH & Yoo, WJ 2013, Gate-controlled Schottky barrier modulation for superior photoresponse of MoS₂ field effect transistor. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724662, Technical Digest - International Electron Devices Meeting, IEDM, pp. 19.6.1-19.6.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 12/9/13. https://doi.org/10.1109/IEDM.2013.6724662

Gate-controlled Schottky barrier modulation for superior photoresponse of MoS₂ field effect transistor. / Li, Hua Min; Lee, Dae Yeong; Choi, Min Sup et al.
2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 19.6.1-19.6.4 6724662 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, Dae Yeong

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AU - Ra, Chang Ho

AU - Yoo, Won Jong

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N2 - An ultrahigh photocurrent (PC) signal which was about thousand times higher compared to the corresponding dark current was achieved in a two-dimensional (2D) multi-layer MoS2 field effect transistor (FET), owing to a gate-controlled MoS2/Ti/Au Schottky barrier (SB) modulation. The SBs can be enlarged for suppressing the electron drift along the channel in dark environment, and be reduced for the collection of photo-excited charge carriers in illuminating environment, providing the great potential for 2D electronic and optoelectronic applications.

AB - An ultrahigh photocurrent (PC) signal which was about thousand times higher compared to the corresponding dark current was achieved in a two-dimensional (2D) multi-layer MoS2 field effect transistor (FET), owing to a gate-controlled MoS2/Ti/Au Schottky barrier (SB) modulation. The SBs can be enlarged for suppressing the electron drift along the channel in dark environment, and be reduced for the collection of photo-excited charge carriers in illuminating environment, providing the great potential for 2D electronic and optoelectronic applications.

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BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013

T2 - 2013 IEEE International Electron Devices Meeting, IEDM 2013

Y2 - 9 December 2013 through 11 December 2013

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