Ga2O3 MOSFETs using spin-on-glass source/drain doping technology

Ke Zeng; Joshua S. Wallace; Christopher Heimburger; Kohei Sasaki; Akito Kuramata; Takekazu Masui; Joseph A. Gardella; Uttam Singisetti

doi:10.1109/LED.2017.2675544

Ga₂O₃ MOSFETs using spin-on-glass source/drain doping technology

Ke Zeng
, Joshua S. Wallace
, Christopher Heimburger
, Kohei Sasaki
, Akito Kuramata
, Takekazu Masui
, Joseph A. Gardella
, Uttam Singisetti

SUNY Buffalo
Novel Crystal Technology, Inc.

Research output: Contribution to journal › Article › peer-review

132 Scopus citations

Abstract

We report the first demonstration of source/drain (S/D) doping using tin (Sn) doped spin-on-glass (SOG) on Ga₂O₃ power MOSFET. The effectiveness of SOG doping is verified by a comparative experiment on semi-insulating Ga₂O₃ substrates. A specific contact resistance of ρ c = 2.1 ± 1.4 × 10_-5 Ω cm² is obtained to the SOG doped layer. The thermal diffusion behavior of Sn in Ga₂O₃ is investigated as well. MOSFETs with SOG S/D doping is fabricated on 200-nm epitaxial Ga₂O₃ layer with an average effective doping of 2× 10¹⁷ /cm³. An increased peak output drain current density of 40 mA/mm is achieved due to reduced S/D resistance. The maximum transconductance (g_m) is extracted to be 1.23 mS/mm for a device with L_g = 2 μ m. The device also shows a large ON/ OFF ratio of 10⁸ and breakdown voltage of 382 V.

Original language	English
Article number	7865940
Pages (from-to)	513-516
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	4
DOIs	https://doi.org/10.1109/LED.2017.2675544
State	Published - Apr 2017

Keywords

diffusion coefficient
gallium oxide
ohmic contact
power MOSFET
SIMS
SOG doping
Spin-on-Glass

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@article{e7512d1b27704260b34665dff4ded506,

title = "Ga2O3 MOSFETs using spin-on-glass source/drain doping technology",

abstract = "We report the first demonstration of source/drain (S/D) doping using tin (Sn) doped spin-on-glass (SOG) on Ga2O3 power MOSFET. The effectiveness of SOG doping is verified by a comparative experiment on semi-insulating Ga2O3 substrates. A specific contact resistance of ρ c = 2.1 ± 1.4 {\texttimes} 10-5 Ω cm2 is obtained to the SOG doped layer. The thermal diffusion behavior of Sn in Ga2O3 is investigated as well. MOSFETs with SOG S/D doping is fabricated on 200-nm epitaxial Ga2O3 layer with an average effective doping of 2{\texttimes} 1017 /cm3. An increased peak output drain current density of 40 mA/mm is achieved due to reduced S/D resistance. The maximum transconductance (gm) is extracted to be 1.23 mS/mm for a device with Lg = 2 μ m. The device also shows a large ON/ OFF ratio of 108 and breakdown voltage of 382 V.",

keywords = "diffusion coefficient, gallium oxide, ohmic contact, power MOSFET, SIMS, SOG doping, Spin-on-Glass",

author = "Ke Zeng and Wallace, \{Joshua S.\} and Christopher Heimburger and Kohei Sasaki and Akito Kuramata and Takekazu Masui and Gardella, \{Joseph A.\} and Uttam Singisetti",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2017",

month = apr,

doi = "10.1109/LED.2017.2675544",

language = "English",

volume = "38",

pages = "513--516",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Ga2O3 MOSFETs using spin-on-glass source/drain doping technology

AU - Zeng, Ke

AU - Wallace, Joshua S.

AU - Heimburger, Christopher

AU - Sasaki, Kohei

AU - Kuramata, Akito

AU - Masui, Takekazu

AU - Gardella, Joseph A.

AU - Singisetti, Uttam

PY - 2017/4

Y1 - 2017/4

N2 - We report the first demonstration of source/drain (S/D) doping using tin (Sn) doped spin-on-glass (SOG) on Ga2O3 power MOSFET. The effectiveness of SOG doping is verified by a comparative experiment on semi-insulating Ga2O3 substrates. A specific contact resistance of ρ c = 2.1 ± 1.4 × 10-5 Ω cm2 is obtained to the SOG doped layer. The thermal diffusion behavior of Sn in Ga2O3 is investigated as well. MOSFETs with SOG S/D doping is fabricated on 200-nm epitaxial Ga2O3 layer with an average effective doping of 2× 1017 /cm3. An increased peak output drain current density of 40 mA/mm is achieved due to reduced S/D resistance. The maximum transconductance (gm) is extracted to be 1.23 mS/mm for a device with Lg = 2 μ m. The device also shows a large ON/ OFF ratio of 108 and breakdown voltage of 382 V.

AB - We report the first demonstration of source/drain (S/D) doping using tin (Sn) doped spin-on-glass (SOG) on Ga2O3 power MOSFET. The effectiveness of SOG doping is verified by a comparative experiment on semi-insulating Ga2O3 substrates. A specific contact resistance of ρ c = 2.1 ± 1.4 × 10-5 Ω cm2 is obtained to the SOG doped layer. The thermal diffusion behavior of Sn in Ga2O3 is investigated as well. MOSFETs with SOG S/D doping is fabricated on 200-nm epitaxial Ga2O3 layer with an average effective doping of 2× 1017 /cm3. An increased peak output drain current density of 40 mA/mm is achieved due to reduced S/D resistance. The maximum transconductance (gm) is extracted to be 1.23 mS/mm for a device with Lg = 2 μ m. The device also shows a large ON/ OFF ratio of 108 and breakdown voltage of 382 V.

KW - diffusion coefficient

KW - gallium oxide

KW - ohmic contact

KW - power MOSFET

KW - SIMS

KW - SOG doping

KW - Spin-on-Glass

UR - https://www.scopus.com/pages/publications/85017640425

U2 - 10.1109/LED.2017.2675544

DO - 10.1109/LED.2017.2675544

M3 - Article

AN - SCOPUS:85017640425

SN - 0741-3106

VL - 38

SP - 513

EP - 516

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

M1 - 7865940

ER -

Ga₂O₃ MOSFETs using spin-on-glass source/drain doping technology

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Keywords

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