Galvanomagnetic effects in semiconductors of p‐Ge type

It is shown that the rate equations for the light and heavy hole distribution functions in p‐Ge can be solved analytically using the real anisotropic dispersion law since for acoustic lattice scattering the collision terms can be described by the isotropic relaxation time depending only on the energy of holes, which is proved by numerical computations. The even Hall effect, the transverse and longitudinal magnetoresistance (MR) as a function of the current and the magnetic field orientation with respect to the crystallographic axes in non heating electric fields E as well as the transverse γ⊥ and longitudinal γ∥ anisotropy of conductivity arising in the heating fields, and the MR linear in the magnetic field are calculated. The linear MR is determined largely by light holes (without these or with their isotropic spectrum the MR would have the reverse sign for the same direction of the magnetic field). The relative contributions of heavy holes to γ⊥ and γ∥ are nearly half of that in the earlier approximate calculations. The even Hall effect, the longitudial MR, and the anisotropy of the transverse MR are almost entirely due to the anisotropy of the heavy hole dispersion law.