Abstract
Measurements of the electrical conductivity sigma equals 1/ rho //0, Hall coefficient R//H and of the magnetoresistance of single crystal p-type Ge films in weak magnetic fields H in the H perpendicular n and H parallel n configurations, where n is the normal to the film surface are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 835-837 |
| Number of pages | 3 |
| Journal | Semiconductors |
| Volume | 10 |
| Issue number | 7 |
| State | Published - 1976 |
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