GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser

H. Y. Liu; R. J. Airey; M. J. Steer; P. A. Houston; I. R. Sellers; D. J. Mowbray

doi:10.1109/MBE.2002.1037848

GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser

H. Y. Liu
, R. J. Airey
, M. J. Steer
, P. A. Houston
, I. R. Sellers
, D. J. Mowbray

Department of Electrical Engineering

University of Sheffield

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Semiconductor quantum dots (QDs) are the subject of extensive study due to their promising applications in novel optoelectronics devices. However relatively few studies of red-emitting QDs have been reported due mainly to the difficulty in fabricating high-quality InAlAs/AlGaAs on GaAs substrates. We study the effect of growth temperature on the optical and structural properties of InAlAs/AlGaAs QDs. With increasing substrate temperature from 530 to 560°C, a significant improvement in the QD material quality is observed. In addition at room temperature, ground state lasing is demonstrated for a laser with six InAlAs/AlGaAs QD layers grown at 560°C.

Original language	English
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	239-240
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037848
State	Published - 2002
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: Sep 15 2002 → Sep 20 2002

Publication series

Name	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	09/15/02 → 09/20/02

Access to Document

10.1109/MBE.2002.1037848

Cite this

Liu, H. Y., Airey, R. J., Steer, M. J., Houston, P. A., Sellers, I. R., & Mowbray, D. J. (2002). GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 239-240). Article 1037848 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037848

@inproceedings{e8b0ba7204bb426a9cafc7cfb93b1fb9,

title = "GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser",

abstract = "Semiconductor quantum dots (QDs) are the subject of extensive study due to their promising applications in novel optoelectronics devices. However relatively few studies of red-emitting QDs have been reported due mainly to the difficulty in fabricating high-quality InAlAs/AlGaAs on GaAs substrates. We study the effect of growth temperature on the optical and structural properties of InAlAs/AlGaAs QDs. With increasing substrate temperature from 530 to 560°C, a significant improvement in the QD material quality is observed. In addition at room temperature, ground state lasing is demonstrated for a laser with six InAlAs/AlGaAs QD layers grown at 560°C.",

author = "Liu, \{H. Y.\} and Airey, \{R. J.\} and Steer, \{M. J.\} and Houston, \{P. A.\} and Sellers, \{I. R.\} and Mowbray, \{D. J.\}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

year = "2002",

doi = "10.1109/MBE.2002.1037848",

language = "English",

series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "239--240",

booktitle = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",

address = "United States",

}

Liu, HY, Airey, RJ, Steer, MJ, Houston, PA, Sellers, IR & Mowbray, DJ 2002, GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037848, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, Institute of Electrical and Electronics Engineers Inc., pp. 239-240, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 09/15/02. https://doi.org/10.1109/MBE.2002.1037848

GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser. / Liu, H. Y.; Airey, R. J.; Steer, M. J. et al.
MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 239-240 1037848 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser

AU - Liu, H. Y.

AU - Airey, R. J.

AU - Steer, M. J.

AU - Houston, P. A.

AU - Sellers, I. R.

AU - Mowbray, D. J.

PY - 2002

Y1 - 2002

N2 - Semiconductor quantum dots (QDs) are the subject of extensive study due to their promising applications in novel optoelectronics devices. However relatively few studies of red-emitting QDs have been reported due mainly to the difficulty in fabricating high-quality InAlAs/AlGaAs on GaAs substrates. We study the effect of growth temperature on the optical and structural properties of InAlAs/AlGaAs QDs. With increasing substrate temperature from 530 to 560°C, a significant improvement in the QD material quality is observed. In addition at room temperature, ground state lasing is demonstrated for a laser with six InAlAs/AlGaAs QD layers grown at 560°C.

AB - Semiconductor quantum dots (QDs) are the subject of extensive study due to their promising applications in novel optoelectronics devices. However relatively few studies of red-emitting QDs have been reported due mainly to the difficulty in fabricating high-quality InAlAs/AlGaAs on GaAs substrates. We study the effect of growth temperature on the optical and structural properties of InAlAs/AlGaAs QDs. With increasing substrate temperature from 530 to 560°C, a significant improvement in the QD material quality is observed. In addition at room temperature, ground state lasing is demonstrated for a laser with six InAlAs/AlGaAs QD layers grown at 560°C.

UR - https://www.scopus.com/pages/publications/84968544688

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DO - 10.1109/MBE.2002.1037848

M3 - Conference contribution

AN - SCOPUS:84968544688

T3 - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

SP - 239

EP - 240

BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

Liu HY, Airey RJ, Steer MJ, Houston PA, Sellers IR, Mowbray DJ. GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 239-240. 1037848. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). doi: 10.1109/MBE.2002.1037848

GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser

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