Full-spectrum optically detected resonance (ODR) spectroscopy of GaAs/AlGaAs quantum wells

G. S. Herold; H. A. Nickel; J. G. Tischler; B. A. Weinstein; B. D. McCombe

doi:10.1016/S1386-9477(98)00010-1

Full-spectrum optically detected resonance (ODR) spectroscopy of GaAs/AlGaAs quantum wells

G. S. Herold
, H. A. Nickel
, J. G. Tischler
, B. A. Weinstein
, B. D. McCombe

Physics

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Resonant magneto-absorption of far-infrared (FIR) laser radiation by neutral and negatively charged donors and free electrons, and the mechanisms of coupling of the power absorbed to various photoluminescence recombination paths in a Si-doped GaAs/AlGaAs multiple-quantum-well structure was studied by optically detected resonance (ODR) spectroscopy. A sensitive charge-coupled-device detection scheme was used to record complete PL/ODR spectra at high resolution with good signal-to-noise. The rich and complex ODR spectra were analyzed by a line-fitting procedure. Results on the neutral donor 1s-2p₊ transition show that at low FIR laster intensities, the recombination is modified by processes that do not involve carrier heating. At high FIR laser intensities, carrier heating effects dominate.

Original language	English
Pages (from-to)	39-43
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00010-1
State	Published - Jul 15 1998

Keywords

FIR spectroscopy
Impurities
Photoluminescence

Access to Document

10.1016/S1386-9477(98)00010-1

Cite this

@article{125122c5c819461c851714cfe1c1373c,

title = "Full-spectrum optically detected resonance (ODR) spectroscopy of GaAs/AlGaAs quantum wells",

abstract = "Resonant magneto-absorption of far-infrared (FIR) laser radiation by neutral and negatively charged donors and free electrons, and the mechanisms of coupling of the power absorbed to various photoluminescence recombination paths in a Si-doped GaAs/AlGaAs multiple-quantum-well structure was studied by optically detected resonance (ODR) spectroscopy. A sensitive charge-coupled-device detection scheme was used to record complete PL/ODR spectra at high resolution with good signal-to-noise. The rich and complex ODR spectra were analyzed by a line-fitting procedure. Results on the neutral donor 1s-2p+ transition show that at low FIR laster intensities, the recombination is modified by processes that do not involve carrier heating. At high FIR laser intensities, carrier heating effects dominate.",

keywords = "FIR spectroscopy, Impurities, Photoluminescence",

author = "Herold, \{G. S.\} and Nickel, \{H. A.\} and Tischler, \{J. G.\} and Weinstein, \{B. A.\} and McCombe, \{B. D.\}",

year = "1998",

month = jul,

day = "15",

doi = "10.1016/S1386-9477(98)00010-1",

language = "English",

volume = "2",

pages = "39--43",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Full-spectrum optically detected resonance (ODR) spectroscopy of GaAs/AlGaAs quantum wells

AU - Herold, G. S.

AU - Nickel, H. A.

AU - Tischler, J. G.

AU - Weinstein, B. A.

AU - McCombe, B. D.

PY - 1998/7/15

Y1 - 1998/7/15

N2 - Resonant magneto-absorption of far-infrared (FIR) laser radiation by neutral and negatively charged donors and free electrons, and the mechanisms of coupling of the power absorbed to various photoluminescence recombination paths in a Si-doped GaAs/AlGaAs multiple-quantum-well structure was studied by optically detected resonance (ODR) spectroscopy. A sensitive charge-coupled-device detection scheme was used to record complete PL/ODR spectra at high resolution with good signal-to-noise. The rich and complex ODR spectra were analyzed by a line-fitting procedure. Results on the neutral donor 1s-2p+ transition show that at low FIR laster intensities, the recombination is modified by processes that do not involve carrier heating. At high FIR laser intensities, carrier heating effects dominate.

AB - Resonant magneto-absorption of far-infrared (FIR) laser radiation by neutral and negatively charged donors and free electrons, and the mechanisms of coupling of the power absorbed to various photoluminescence recombination paths in a Si-doped GaAs/AlGaAs multiple-quantum-well structure was studied by optically detected resonance (ODR) spectroscopy. A sensitive charge-coupled-device detection scheme was used to record complete PL/ODR spectra at high resolution with good signal-to-noise. The rich and complex ODR spectra were analyzed by a line-fitting procedure. Results on the neutral donor 1s-2p+ transition show that at low FIR laster intensities, the recombination is modified by processes that do not involve carrier heating. At high FIR laser intensities, carrier heating effects dominate.

KW - FIR spectroscopy

KW - Impurities

KW - Photoluminescence

UR - https://www.scopus.com/pages/publications/0348199651

U2 - 10.1016/S1386-9477(98)00010-1

DO - 10.1016/S1386-9477(98)00010-1

M3 - Article

AN - SCOPUS:0348199651

SN - 1386-9477

VL - 2

SP - 39

EP - 43

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

ER -

Full-spectrum optically detected resonance (ODR) spectroscopy of GaAs/AlGaAs quantum wells

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this