@inproceedings{dc1bd2768de343f38a3d03935f60f9e9,
title = "Frequency limits of InP-based integrated circuits",
abstract = "We examine the limits in scaling of InP-based bipolar and field effect transistors for increased device bandwidth. With InP-based HBTs, emitter and base contact resistivities and IC thermal resistance are the major limits to increased device bandwidth; devices with 1-1.5 THz simultaneous f τ and fmax are feasible. Major challenges faced in developing either InGaAs HEMTs having THz cutoff frequencies or InGaAs-channel MOSFETs having drive current consistent with the 22 nm ITRS objectives include the low two-dimensional effective density of states and the high bound state energies in narrow quantum wells.",
author = "Mark Rodwell and E. Lind and Z. Griffith and Bank, \{S. R.\} and Crook, \{A. M.\} and U. Singisetti and M. Wistey and G. Burek and Gossard, \{A. C.\}",
year = "2007",
doi = "10.1109/ICIPRM.2007.380676",
language = "English",
isbn = "142440875X",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "9--13",
booktitle = "IPRM'07",
note = "IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2007 Through 18-05-2007",
}