Frequency domain studies of intersubband optical transitions in Si inversion layers

B. D. McCombe; R. T. Holm; D. E. Schafer

doi:10.1016/0038-1098(79)90710-5

Frequency domain studies of intersubband optical transitions in Si inversion layers

B. D. McCombe
, R. T. Holm
, D. E. Schafer

Physics

Naval Research Laboratory

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Fourier Transform Spectroscopic studies of inter-electric-field subband transitions in Silicon inversion layers are compared with optical properties calculated with a 5 media model and a classical dielectric function representation of the inversion layer. Qualitative discrepancies in relative intensities of the subband transitions are interpreted in terms of many-body effects.

Original language	English
Pages (from-to)	603-608
Number of pages	6
Journal	Solid State Communications
Volume	32
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(79)90710-5
State	Published - Nov 1979

Access to Document

10.1016/0038-1098(79)90710-5

Cite this

@article{b9b242c6e2984f61afcf05d54461e5fc,

title = "Frequency domain studies of intersubband optical transitions in Si inversion layers",

abstract = "Fourier Transform Spectroscopic studies of inter-electric-field subband transitions in Silicon inversion layers are compared with optical properties calculated with a 5 media model and a classical dielectric function representation of the inversion layer. Qualitative discrepancies in relative intensities of the subband transitions are interpreted in terms of many-body effects.",

author = "McCombe, \{B. D.\} and Holm, \{R. T.\} and Schafer, \{D. E.\}",

year = "1979",

month = nov,

doi = "10.1016/0038-1098(79)90710-5",

language = "English",

volume = "32",

pages = "603--608",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "8",

}

TY - JOUR

T1 - Frequency domain studies of intersubband optical transitions in Si inversion layers

AU - McCombe, B. D.

AU - Holm, R. T.

AU - Schafer, D. E.

PY - 1979/11

Y1 - 1979/11

N2 - Fourier Transform Spectroscopic studies of inter-electric-field subband transitions in Silicon inversion layers are compared with optical properties calculated with a 5 media model and a classical dielectric function representation of the inversion layer. Qualitative discrepancies in relative intensities of the subband transitions are interpreted in terms of many-body effects.

AB - Fourier Transform Spectroscopic studies of inter-electric-field subband transitions in Silicon inversion layers are compared with optical properties calculated with a 5 media model and a classical dielectric function representation of the inversion layer. Qualitative discrepancies in relative intensities of the subband transitions are interpreted in terms of many-body effects.

UR - https://www.scopus.com/pages/publications/0018543521

U2 - 10.1016/0038-1098(79)90710-5

DO - 10.1016/0038-1098(79)90710-5

M3 - Article

AN - SCOPUS:0018543521

SN - 0038-1098

VL - 32

SP - 603

EP - 608

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Frequency domain studies of intersubband optical transitions in Si inversion layers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this