Frequency-dependent cyclotron effective masses in Si inversion layers

T. A. Kennedy; R. J. Wagner; B. D. McCombe; D. C. Tsui

doi:10.1103/PhysRevLett.35.1031

Frequency-dependent cyclotron effective masses in Si inversion layers

T. A. Kennedy
, R. J. Wagner
, B. D. McCombe
, D. C. Tsui

Physics

Naval Research Laboratory
Nokia

Research output: Contribution to journal › Article › peer-review

76 Scopus citations

Abstract

A marked frequency dependence of the far-infrared cyclotron effective mass of inversion-layer electrons in a Si metal-oxide-semiconductor device has been observed for the first time. A qualitative interpretation of these data in terms of electron-electron interactions is presented.

Original language	English
Pages (from-to)	1031-1034
Number of pages	4
Journal	Physical Review Letters
Volume	35
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevLett.35.1031
State	Published - 1975

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10.1103/PhysRevLett.35.1031

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@article{79625523db90446491eb5fb8c58cddea,

title = "Frequency-dependent cyclotron effective masses in Si inversion layers",

abstract = "A marked frequency dependence of the far-infrared cyclotron effective mass of inversion-layer electrons in a Si metal-oxide-semiconductor device has been observed for the first time. A qualitative interpretation of these data in terms of electron-electron interactions is presented.",

author = "Kennedy, \{T. A.\} and Wagner, \{R. J.\} and McCombe, \{B. D.\} and Tsui, \{D. C.\}",

year = "1975",

doi = "10.1103/PhysRevLett.35.1031",

language = "English",

volume = "35",

pages = "1031--1034",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "15",

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T1 - Frequency-dependent cyclotron effective masses in Si inversion layers

AU - Kennedy, T. A.

AU - Wagner, R. J.

AU - McCombe, B. D.

AU - Tsui, D. C.

PY - 1975

Y1 - 1975

N2 - A marked frequency dependence of the far-infrared cyclotron effective mass of inversion-layer electrons in a Si metal-oxide-semiconductor device has been observed for the first time. A qualitative interpretation of these data in terms of electron-electron interactions is presented.

AB - A marked frequency dependence of the far-infrared cyclotron effective mass of inversion-layer electrons in a Si metal-oxide-semiconductor device has been observed for the first time. A qualitative interpretation of these data in terms of electron-electron interactions is presented.

UR - https://www.scopus.com/pages/publications/3543101287

U2 - 10.1103/PhysRevLett.35.1031

DO - 10.1103/PhysRevLett.35.1031

M3 - Article

AN - SCOPUS:3543101287

SN - 0031-9007

VL - 35

SP - 1031

EP - 1034

JO - Physical Review Letters

JF - Physical Review Letters

IS - 15

ER -

Frequency-dependent cyclotron effective masses in Si inversion layers

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