Frequency Dependence of Cyclotron Resonance in Si Inversion Layers

T. A. Kennedy; R. J. Wagner; B. D. McCombe; D. C. Tsui

doi:10.1080/10408437508243500

Frequency Dependence of Cyclotron Resonance in Si Inversion Layers

T. A. Kennedy
, R. J. Wagner
, B. D. McCombe
, D. C. Tsui

Physics

Naval Research Laboratory
Nokia

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Original language	English
Pages (from-to)	391-395
Number of pages	5
Journal	C R C Critical Reviews in Solid State Sciences
Volume	5
Issue number	3
DOIs	https://doi.org/10.1080/10408437508243500
State	Published - Oct 1975

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title = "Frequency Dependence of Cyclotron Resonance in Si Inversion Layers",

author = "Kennedy, \{T. A.\} and Wagner, \{R. J.\} and McCombe, \{B. D.\} and Tsui, \{D. C.\}",

year = "1975",

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T1 - Frequency Dependence of Cyclotron Resonance in Si Inversion Layers

AU - Kennedy, T. A.

AU - Wagner, R. J.

AU - McCombe, B. D.

AU - Tsui, D. C.

PY - 1975/10

Y1 - 1975/10

UR - https://www.scopus.com/pages/publications/84918057673

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DO - 10.1080/10408437508243500

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SP - 391

EP - 395

JO - C R C Critical Reviews in Solid State Sciences

JF - C R C Critical Reviews in Solid State Sciences

IS - 3

ER -

Frequency Dependence of Cyclotron Resonance in Si Inversion Layers

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