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Formation of Mn-As centers in In1-xMnxAs diluted magnetic semiconductors

  • A. Krol
  • , Y. L. Soo
  • , Z. H. Ming
  • , Y. H. Kao
  • , H. Munekata
  • , L. L. Chang
  • SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

XAFS spectra at the Mn K-edge were obtained for films of In1-xMnxAs (0.0014≤x≤0.12) grown by MBE method at two different substrate temperatures Ts = 200-210 °C and Ts = 280-300 °C. It has been found that Mn-As complexes which consist of a central Mn atom surrounded by six neighboring As most likely arranged in the form of a distorted trigonal antiprism with one or two additional Mn atoms placed on the long axis of the antiprism, can substitute for the In-As tetrahedron in the undistorted zincblende structure. For a composition of x = 0.12 we have found the formation of MnAs clusters with NiAs-like structure in the high-growth-temperature samples. We thus conclude that the magnetic properties of the In1-xMnxAs semiconductors are mainly determined by the formation and local structure of the Mn-As complexes.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages245-248
Number of pages4
ISBN (Print)1558991859
StatePublished - 1993
EventProceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume290
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the Second Symposium on Dynamics in Small Confining Systems
CityBoston, MA, USA
Period11/30/9212/4/92

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