Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition

W. K. Chen; J. C. Chen; J. F. Chen; C. R. Wie; P. L. Liu; D. M. Hwang

doi:10.1117/12.961990

Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition

W. K. Chen
, J. C. Chen
, J. F. Chen
, C. R. Wie
, P. L. Liu
, D. M. Hwang

Department of Electrical Engineering

SUNY Buffalo
Telcordia Technologies

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

Original language	English
Pages (from-to)	100-103
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1144
DOIs	https://doi.org/10.1117/12.961990
State	Published - Nov 28 1989

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title = "Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition",

abstract = "We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.",

author = "Chen, \{W. K.\} and Chen, \{J. C.\} and Chen, \{J. F.\} and Wie, \{C. R.\} and Liu, \{P. L.\} and Hwang, \{D. M.\}",

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doi = "10.1117/12.961990",

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AU - Chen, W. K.

AU - Chen, J. C.

AU - Chen, J. F.

AU - Wie, C. R.

AU - Liu, P. L.

AU - Hwang, D. M.

PY - 1989/11/28

Y1 - 1989/11/28

N2 - We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

AB - We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

UR - https://www.scopus.com/pages/publications/0009773891

U2 - 10.1117/12.961990

DO - 10.1117/12.961990

M3 - Article

AN - SCOPUS:0009773891

SN - 0277-786X

VL - 1144

SP - 100

EP - 103

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition

Abstract

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