@inproceedings{b2ee2a62bc9944f3b5ddd1b54c13399c,
title = "Flexible Si BiCMOS on plastic substrates",
abstract = "In this work, we have demonstrated flexible BiCMOS devices on transferable single crystalline Si nanomembrane (Si NM), including n-channel and p-channel metal-oxide semiconductor field-effect transistors (NMOS \& PMOS FETs) and NPN bipolar transistors (BJTs). All types of devices that were successfully integrated into Si NM demonstrated excellent DC and radio-frequency (RF) characteristics and performed a stable transconductance and a current gain under the bending condition. Overall, Si NM based flexible BiCMOS devices offer great promises for high-performance and multi-functional future flexible applications. Moreover, a flexible BiCMOS process we proposed has a good compatibility with commercial microfabrication technology and thus it is easy to adapt to industrial usage.",
keywords = "BiCMOS devices, BJTs, Flexible electronics, TFTs",
author = "Seo, \{Jung Hun\} and Kan Zhang and Weidong Zhou and Zhenqiang Ma",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017 ; Conference date: 15-01-2017 Through 18-01-2017",
year = "2017",
month = mar,
day = "8",
doi = "10.1109/SIRF.2017.7874376",
language = "English",
series = "SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "79--81",
booktitle = "SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",
address = "United States",
}