First synthesized WS2 nanotube and nanoribbon field effect transistors grown by chemical vapor transport

Sara Fathipour; Huamin Li; Paolo Paletti; Maja Remskar; Susan Fullerton-Shirey; Alan Seabaugh

doi:10.1109/DRC.2017.7999406

First synthesized WS₂ nanotube and nanoribbon field effect transistors grown by chemical vapor transport

Sara Fathipour
, Huamin Li
, Paolo Paletti
, Maja Remskar
, Susan Fullerton-Shirey
, Alan Seabaugh

Department of Electrical Engineering

University of Notre Dame
Jožef Stefan Institute
University of Pittsburgh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

While planar two-dimensional field effect transistors (FETs) are being widely explored [1], there are only a few reports of MoS2 [2-4] and WS₂ [5-8] nanotube (NT) and nanoribbon (NR) FETs. A benefit of these crystalline forms is the absence of edges associated with traps, and the potential for ideal subthreshold swing with wrapped gates. Density functional theory predicts that the bandgap of MoS₂ nanotubes remains direct and decreases with diameter [9] due to strain. This makes nanotubes appealing for tunnel FETs at the scaling limit because the decrease in bandgap should provide an increase in current. Here we report the first WS2 NT and NR FETs synthesized by chemical vapor transport (CVT) [10]. Prior reports on WS₂ [5-8] are based on sulphurization of W and WO nanowhiskers.

Original language	English
Title of host publication	75th Annual Device Research Conference, DRC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509063277
DOIs	https://doi.org/10.1109/DRC.2017.7999406
State	Published - Aug 1 2017
Event	75th Annual Device Research Conference, DRC 2017 - South Bend, United States Duration: Jun 25 2017 → Jun 28 2017

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	75th Annual Device Research Conference, DRC 2017
Country/Territory	United States
City	South Bend
Period	06/25/17 → 06/28/17

Access to Document

10.1109/DRC.2017.7999406

Cite this

Fathipour, S., Li, H., Paletti, P., Remskar, M., Fullerton-Shirey, S., & Seabaugh, A. (2017). First synthesized WS₂ nanotube and nanoribbon field effect transistors grown by chemical vapor transport. In 75th Annual Device Research Conference, DRC 2017 Article 7999406 (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2017.7999406

@inproceedings{fe4e7bc535b140599f067285045473d9,

title = "First synthesized WS2 nanotube and nanoribbon field effect transistors grown by chemical vapor transport",

abstract = "While planar two-dimensional field effect transistors (FETs) are being widely explored [1], there are only a few reports of MoS2 [2-4] and WS2 [5-8] nanotube (NT) and nanoribbon (NR) FETs. A benefit of these crystalline forms is the absence of edges associated with traps, and the potential for ideal subthreshold swing with wrapped gates. Density functional theory predicts that the bandgap of MoS2 nanotubes remains direct and decreases with diameter [9] due to strain. This makes nanotubes appealing for tunnel FETs at the scaling limit because the decrease in bandgap should provide an increase in current. Here we report the first WS2 NT and NR FETs synthesized by chemical vapor transport (CVT) [10]. Prior reports on WS2 [5-8] are based on sulphurization of W and WO nanowhiskers.",

author = "Sara Fathipour and Huamin Li and Paolo Paletti and Maja Remskar and Susan Fullerton-Shirey and Alan Seabaugh",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 75th Annual Device Research Conference, DRC 2017 ; Conference date: 25-06-2017 Through 28-06-2017",

year = "2017",

month = aug,

day = "1",

doi = "10.1109/DRC.2017.7999406",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "75th Annual Device Research Conference, DRC 2017",

address = "United States",

}

Fathipour, S, Li, H, Paletti, P, Remskar, M, Fullerton-Shirey, S & Seabaugh, A 2017, First synthesized WS₂ nanotube and nanoribbon field effect transistors grown by chemical vapor transport. in 75th Annual Device Research Conference, DRC 2017., 7999406, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., 75th Annual Device Research Conference, DRC 2017, South Bend, United States, 06/25/17. https://doi.org/10.1109/DRC.2017.7999406

First synthesized WS₂ nanotube and nanoribbon field effect transistors grown by chemical vapor transport. / Fathipour, Sara; Li, Huamin; Paletti, Paolo et al.
75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7999406 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - First synthesized WS2 nanotube and nanoribbon field effect transistors grown by chemical vapor transport

AU - Fathipour, Sara

AU - Li, Huamin

AU - Paletti, Paolo

AU - Remskar, Maja

AU - Fullerton-Shirey, Susan

AU - Seabaugh, Alan

PY - 2017/8/1

Y1 - 2017/8/1

N2 - While planar two-dimensional field effect transistors (FETs) are being widely explored [1], there are only a few reports of MoS2 [2-4] and WS2 [5-8] nanotube (NT) and nanoribbon (NR) FETs. A benefit of these crystalline forms is the absence of edges associated with traps, and the potential for ideal subthreshold swing with wrapped gates. Density functional theory predicts that the bandgap of MoS2 nanotubes remains direct and decreases with diameter [9] due to strain. This makes nanotubes appealing for tunnel FETs at the scaling limit because the decrease in bandgap should provide an increase in current. Here we report the first WS2 NT and NR FETs synthesized by chemical vapor transport (CVT) [10]. Prior reports on WS2 [5-8] are based on sulphurization of W and WO nanowhiskers.

AB - While planar two-dimensional field effect transistors (FETs) are being widely explored [1], there are only a few reports of MoS2 [2-4] and WS2 [5-8] nanotube (NT) and nanoribbon (NR) FETs. A benefit of these crystalline forms is the absence of edges associated with traps, and the potential for ideal subthreshold swing with wrapped gates. Density functional theory predicts that the bandgap of MoS2 nanotubes remains direct and decreases with diameter [9] due to strain. This makes nanotubes appealing for tunnel FETs at the scaling limit because the decrease in bandgap should provide an increase in current. Here we report the first WS2 NT and NR FETs synthesized by chemical vapor transport (CVT) [10]. Prior reports on WS2 [5-8] are based on sulphurization of W and WO nanowhiskers.

UR - https://www.scopus.com/pages/publications/85028048591

U2 - 10.1109/DRC.2017.7999406

DO - 10.1109/DRC.2017.7999406

M3 - Conference contribution

AN - SCOPUS:85028048591

T3 - Device Research Conference - Conference Digest, DRC

BT - 75th Annual Device Research Conference, DRC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 75th Annual Device Research Conference, DRC 2017

Y2 - 25 June 2017 through 28 June 2017

ER -

Fathipour S, Li H, Paletti P, Remskar M, Fullerton-Shirey S, Seabaugh A. First synthesized WS₂ nanotube and nanoribbon field effect transistors grown by chemical vapor transport. In 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7999406. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2017.7999406