Field-effect-transistor characteristics of solvate C₆₀ fullerene nanowhiskers

We demonstrate the operation of C₆₀ fullerene nanowhisker (FNW) field-effect transistors (FETs), realized by dissolving C₆₀ powder in either m-xylene or chlorobenzene solvents and performing liquid-liquid interface precipitation. There exists a clear dependence on solvent species for the FET performance. In contrast to prior studies, in which the FETs were investigated under vacuum conditions to avoid introducing crystalline disorder, we achieve comparable transistor operation for FETs under a N₂ atmosphere. The finding that solvate FNWs may be used to implement FETs could have important technological implications, by allowing practical applications of these materials to be developed.