Field Effect and Raman Characterization of Self-Assembled Mos Nanoscrolls

Simran Shahi; Maomao Liu; Hemendra Nath Jaiswal; Licheng Xiao; Sichen Wei; Hyun Kim; Seok Joon Yun; Young Hee Lee; Fei Yao; Huamin Li

doi:10.1109/DRC46940.2019.9046427

Field Effect and Raman Characterization of Self-Assembled Mos Nanoscrolls

Simran Shahi
, Maomao Liu
, Hemendra Nath Jaiswal
, Licheng Xiao
, Sichen Wei
, Hyun Kim
, Seok Joon Yun
, Young Hee Lee
, Fei Yao
, Huamin Li

SUNY Buffalo
Institute for Basic Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Monolayer MoS with a direct and suitable bandgap and high flexibility make them fascinating building blocks for constructing novel nanostructures via a self-assembly process [1], [2]. In this work, we exploit liquid intercalation to activate the self-assembly of MoS nanoscroll (NS) architectures from the monolayer flakes. Both metallic and semiconducting MoS NSs can be identified by field-effect IV characterizations, and further linked to their Raman spectra in a statistical analysis. The self-assembled NS architecture bridges and inherits the unique properties of 1D and 2D nanomaterials, rendering great potential in various applications such as electronic/optoelectronic devices and energy storage.

Original language	English
Title of host publication	2019 Device Research Conference, DRC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	133-134
Number of pages	2
ISBN (Electronic)	9781728121123
DOIs	https://doi.org/10.1109/DRC46940.2019.9046427
State	Published - Jun 2019
Event	2019 Device Research Conference, DRC 2019 - Ann Arbor, United States Duration: Jun 23 2019 → Jun 26 2019

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2019-June
ISSN (Print)	1548-3770

Conference

Conference	2019 Device Research Conference, DRC 2019
Country/Territory	United States
City	Ann Arbor
Period	06/23/19 → 06/26/19

Access to Document

10.1109/DRC46940.2019.9046427

Cite this

Shahi, S., Liu, M., Jaiswal, H. N., Xiao, L., Wei, S., Kim, H., Yun, S. J., Lee, Y. H., Yao, F., & Li, H. (2019). Field Effect and Raman Characterization of Self-Assembled Mos Nanoscrolls. In 2019 Device Research Conference, DRC 2019 (pp. 133-134). Article 9046427 (Device Research Conference - Conference Digest, DRC; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC46940.2019.9046427

@inproceedings{0adec57f834741e18930fa0617844ad9,

title = "Field Effect and Raman Characterization of Self-Assembled Mos Nanoscrolls",

abstract = "Monolayer MoS with a direct and suitable bandgap and high flexibility make them fascinating building blocks for constructing novel nanostructures via a self-assembly process [1], [2]. In this work, we exploit liquid intercalation to activate the self-assembly of MoS nanoscroll (NS) architectures from the monolayer flakes. Both metallic and semiconducting MoS NSs can be identified by field-effect IV characterizations, and further linked to their Raman spectra in a statistical analysis. The self-assembled NS architecture bridges and inherits the unique properties of 1D and 2D nanomaterials, rendering great potential in various applications such as electronic/optoelectronic devices and energy storage.",

author = "Simran Shahi and Maomao Liu and Jaiswal, \{Hemendra Nath\} and Licheng Xiao and Sichen Wei and Hyun Kim and Yun, \{Seok Joon\} and Lee, \{Young Hee\} and Fei Yao and Huamin Li",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Device Research Conference, DRC 2019 ; Conference date: 23-06-2019 Through 26-06-2019",

year = "2019",

month = jun,

doi = "10.1109/DRC46940.2019.9046427",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "133--134",

booktitle = "2019 Device Research Conference, DRC 2019",

address = "United States",

}

Shahi, S, Liu, M, Jaiswal, HN, Xiao, L, Wei, S, Kim, H, Yun, SJ, Lee, YH, Yao, F & Li, H 2019, Field Effect and Raman Characterization of Self-Assembled Mos Nanoscrolls. in 2019 Device Research Conference, DRC 2019., 9046427, Device Research Conference - Conference Digest, DRC, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 133-134, 2019 Device Research Conference, DRC 2019, Ann Arbor, United States, 06/23/19. https://doi.org/10.1109/DRC46940.2019.9046427

Field Effect and Raman Characterization of Self-Assembled Mos Nanoscrolls. / Shahi, Simran; Liu, Maomao; Jaiswal, Hemendra Nath et al.
2019 Device Research Conference, DRC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 133-134 9046427 (Device Research Conference - Conference Digest, DRC; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Field Effect and Raman Characterization of Self-Assembled Mos Nanoscrolls

AU - Shahi, Simran

AU - Liu, Maomao

AU - Jaiswal, Hemendra Nath

AU - Xiao, Licheng

AU - Wei, Sichen

AU - Kim, Hyun

AU - Yun, Seok Joon

AU - Lee, Young Hee

AU - Yao, Fei

AU - Li, Huamin

PY - 2019/6

Y1 - 2019/6

N2 - Monolayer MoS with a direct and suitable bandgap and high flexibility make them fascinating building blocks for constructing novel nanostructures via a self-assembly process [1], [2]. In this work, we exploit liquid intercalation to activate the self-assembly of MoS nanoscroll (NS) architectures from the monolayer flakes. Both metallic and semiconducting MoS NSs can be identified by field-effect IV characterizations, and further linked to their Raman spectra in a statistical analysis. The self-assembled NS architecture bridges and inherits the unique properties of 1D and 2D nanomaterials, rendering great potential in various applications such as electronic/optoelectronic devices and energy storage.

AB - Monolayer MoS with a direct and suitable bandgap and high flexibility make them fascinating building blocks for constructing novel nanostructures via a self-assembly process [1], [2]. In this work, we exploit liquid intercalation to activate the self-assembly of MoS nanoscroll (NS) architectures from the monolayer flakes. Both metallic and semiconducting MoS NSs can be identified by field-effect IV characterizations, and further linked to their Raman spectra in a statistical analysis. The self-assembled NS architecture bridges and inherits the unique properties of 1D and 2D nanomaterials, rendering great potential in various applications such as electronic/optoelectronic devices and energy storage.

UR - https://www.scopus.com/pages/publications/85083159038

U2 - 10.1109/DRC46940.2019.9046427

DO - 10.1109/DRC46940.2019.9046427

M3 - Conference contribution

AN - SCOPUS:85083159038

T3 - Device Research Conference - Conference Digest, DRC

SP - 133

EP - 134

BT - 2019 Device Research Conference, DRC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Device Research Conference, DRC 2019

Y2 - 23 June 2019 through 26 June 2019

ER -

Field Effect and Raman Characterization of Self-Assembled Mos Nanoscrolls

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