Field-dependent conductivity of lightly doped p-Si at 77 K

L. Reggiani; L. Varani; J. C. Vaissiere; J. P. Nougier; V. Mitin

doi:10.1063/1.343686

Field-dependent conductivity of lightly doped p-Si at 77 K

L. Reggiani
, L. Varani
, J. C. Vaissiere
, J. P. Nougier
, V. Mitin

Department of Electrical Engineering

University of Modena and Reggio Emilia
Universite des Sciences et Techniques du Languedoc

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A theoretical investigation and new experiments on the conductivity of lightly doped p-Si (boron) at 77 K are presented. The conductivity is studied as a function of the electric field in the range 10<E<10⁴ V/cm. The experimental results are interpreted within an original Monto Carlo simulation which includes the mechanism of generation and recombination from impurity centers, thus allowing a simultaneous calculation of the mobility and the fraction of ionized impurities. The good agreement between the theory and the experiments supports the reliability of the physical model suggested.

Original language	English
Pages (from-to)	5404-5408
Number of pages	5
Journal	Journal of Applied Physics
Volume	66
Issue number	11
DOIs	https://doi.org/10.1063/1.343686
State	Published - 1989

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abstract = "A theoretical investigation and new experiments on the conductivity of lightly doped p-Si (boron) at 77 K are presented. The conductivity is studied as a function of the electric field in the range 104 V/cm. The experimental results are interpreted within an original Monto Carlo simulation which includes the mechanism of generation and recombination from impurity centers, thus allowing a simultaneous calculation of the mobility and the fraction of ionized impurities. The good agreement between the theory and the experiments supports the reliability of the physical model suggested.",

author = "L. Reggiani and L. Varani and Vaissiere, \{J. C.\} and Nougier, \{J. P.\} and V. Mitin",

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AU - Reggiani, L.

AU - Varani, L.

AU - Vaissiere, J. C.

AU - Nougier, J. P.

AU - Mitin, V.

PY - 1989

Y1 - 1989

N2 - A theoretical investigation and new experiments on the conductivity of lightly doped p-Si (boron) at 77 K are presented. The conductivity is studied as a function of the electric field in the range 104 V/cm. The experimental results are interpreted within an original Monto Carlo simulation which includes the mechanism of generation and recombination from impurity centers, thus allowing a simultaneous calculation of the mobility and the fraction of ionized impurities. The good agreement between the theory and the experiments supports the reliability of the physical model suggested.

AB - A theoretical investigation and new experiments on the conductivity of lightly doped p-Si (boron) at 77 K are presented. The conductivity is studied as a function of the electric field in the range 104 V/cm. The experimental results are interpreted within an original Monto Carlo simulation which includes the mechanism of generation and recombination from impurity centers, thus allowing a simultaneous calculation of the mobility and the fraction of ionized impurities. The good agreement between the theory and the experiments supports the reliability of the physical model suggested.

UR - https://www.scopus.com/pages/publications/36549101228

U2 - 10.1063/1.343686

DO - 10.1063/1.343686

M3 - Article

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VL - 66

SP - 5404

EP - 5408

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Field-dependent conductivity of lightly doped p-Si at 77 K

Abstract

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