Ferromagnetic GaSb/InAs-based materials and MnAs thin films for spintronics applications

H. Luo; G. B. Kim; M. Cheon; S. Wang; B. D. McCombe

Ferromagnetic GaSb/InAs-based materials and MnAs thin films for spintronics applications

H. Luo
, G. B. Kim
, M. Cheon
, S. Wang
, B. D. McCombe

Physics

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ferromagnetic GaSb/InAs structures were fabricated for investigation of their potentials in spintronics applications. The growth and characterization of Ga^1-xMn_xSb random alloys and GaSb/Mn digital alloys resulted in materials with robust ferromagnetism, with hysteresis observable in Hall experiments at temperatures as high as 60 K in the case of digital alloys. As a candidate for spin injection, MnAs epilayers were studied. A strong dependence on sample dimensions was found for MnAs microstructures. It was observed that exchange interaction between MnAs and antiferromagnetic Cr is effective in maintaining ferromagnetic properties in MnAs microstructures.

Original language	English
Pages (from-to)	161-167
Number of pages	7
Journal	Institute of Physics Conference Series
Volume	184
State	Published - 2005
Event	31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: Sep 12 2004 → Dec 16 2004

Cite this

@article{99a8807502974d889a10b6361979d0d4,

title = "Ferromagnetic GaSb/InAs-based materials and MnAs thin films for spintronics applications",

abstract = "Ferromagnetic GaSb/InAs structures were fabricated for investigation of their potentials in spintronics applications. The growth and characterization of Ga1-xMnxSb random alloys and GaSb/Mn digital alloys resulted in materials with robust ferromagnetism, with hysteresis observable in Hall experiments at temperatures as high as 60 K in the case of digital alloys. As a candidate for spin injection, MnAs epilayers were studied. A strong dependence on sample dimensions was found for MnAs microstructures. It was observed that exchange interaction between MnAs and antiferromagnetic Cr is effective in maintaining ferromagnetic properties in MnAs microstructures.",

author = "H. Luo and Kim, \{G. B.\} and M. Cheon and S. Wang and McCombe, \{B. D.\}",

year = "2005",

language = "English",

volume = "184",

pages = "161--167",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

note = "31st International Symposium of Compound Semiconductors 2004 ; Conference date: 12-09-2004 Through 16-12-2004",

}

TY - JOUR

T1 - Ferromagnetic GaSb/InAs-based materials and MnAs thin films for spintronics applications

AU - Luo, H.

AU - Kim, G. B.

AU - Cheon, M.

AU - Wang, S.

AU - McCombe, B. D.

PY - 2005

Y1 - 2005

N2 - Ferromagnetic GaSb/InAs structures were fabricated for investigation of their potentials in spintronics applications. The growth and characterization of Ga1-xMnxSb random alloys and GaSb/Mn digital alloys resulted in materials with robust ferromagnetism, with hysteresis observable in Hall experiments at temperatures as high as 60 K in the case of digital alloys. As a candidate for spin injection, MnAs epilayers were studied. A strong dependence on sample dimensions was found for MnAs microstructures. It was observed that exchange interaction between MnAs and antiferromagnetic Cr is effective in maintaining ferromagnetic properties in MnAs microstructures.

AB - Ferromagnetic GaSb/InAs structures were fabricated for investigation of their potentials in spintronics applications. The growth and characterization of Ga1-xMnxSb random alloys and GaSb/Mn digital alloys resulted in materials with robust ferromagnetism, with hysteresis observable in Hall experiments at temperatures as high as 60 K in the case of digital alloys. As a candidate for spin injection, MnAs epilayers were studied. A strong dependence on sample dimensions was found for MnAs microstructures. It was observed that exchange interaction between MnAs and antiferromagnetic Cr is effective in maintaining ferromagnetic properties in MnAs microstructures.

UR - https://www.scopus.com/pages/publications/33644508335

M3 - Conference article

AN - SCOPUS:33644508335

SN - 0951-3248

VL - 184

SP - 161

EP - 167

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - 31st International Symposium of Compound Semiconductors 2004

Y2 - 12 September 2004 through 16 December 2004

ER -

Ferromagnetic GaSb/InAs-based materials and MnAs thin films for spintronics applications

Abstract

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