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Ferroelectric and ferromagnetic properties of epitaxial BiFeO 3-BiMnO3 films on ion-beam-assisted deposited TiN buffered flexible Hastelloy

  • J. Xiong
  • , V. Matias
  • , B. W. Tao
  • , Y. R. Li
  • , Q. X. Jia
  • University of Electronic Science and Technology of China
  • Los Alamos National Laboratory

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Growth of multifunctional thin films on flexible substrates is of great technological significance since such a platform is needed for flexible electronics. In this study, we report the growth of biaxially aligned (BiFeO3)0.5:(BiMnO3)0.5 [BFO-BMO] films on polycrystalline Hastelloy by using a biaxially aligned TiN as a seed layer deposited by ion-beam-assisted deposited and a La0.7Sr 0.3MnO3 (LSMO) as a buffer layer deposited by pulsed laser deposition. The LSMO is used not only as a buffer layer but also as the bottom electrode of the BFO-BMO films. X-ray diffraction showed that the BFO-BMO films are biaxially oriented along both in-plane and out-of-plane directions. The BFO-BMO films on flexible metal substrates showed a polarization of 22.9 μC/cm2. The magnetization of the BFO-BMO/LSMO is 62emu/cc at room temperature.

Original languageEnglish
Article number17D913
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
StatePublished - May 7 2014

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