Far infrared resonant magnetoabsorption in low density Si inversion layers

T. A. Kennedy; R. J. Wagner; B. D. McCombe; D. C. Tsui

doi:10.1016/0038-1098(77)90125-9

Far infrared resonant magnetoabsorption in low density Si inversion layers

T. A. Kennedy
, R. J. Wagner
, B. D. McCombe
, D. C. Tsui

Physics

Naval Research Laboratory
Nokia

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

The density and temperature dependences of high frequency/resonant field (61.3 cm^-1, 11T) resonant magnetoabsorption data in (100) Si inversion layers at low densities are strikingly different from those observed at lower frequencies/fields. The results, which include a dramatic resonant line narrowing at high fields, are discussed in light of single-electron localization and the possibility of a cooperative electronic transition assisted by the large magnetic field.

Original language	English
Pages (from-to)	459-462
Number of pages	4
Journal	Solid State Communications
Volume	22
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(77)90125-9
State	Published - May 1977

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title = "Far infrared resonant magnetoabsorption in low density Si inversion layers",

abstract = "The density and temperature dependences of high frequency/resonant field (61.3 cm-1, 11T) resonant magnetoabsorption data in (100) Si inversion layers at low densities are strikingly different from those observed at lower frequencies/fields. The results, which include a dramatic resonant line narrowing at high fields, are discussed in light of single-electron localization and the possibility of a cooperative electronic transition assisted by the large magnetic field.",

author = "Kennedy, \{T. A.\} and Wagner, \{R. J.\} and McCombe, \{B. D.\} and Tsui, \{D. C.\}",

year = "1977",

month = may,

doi = "10.1016/0038-1098(77)90125-9",

language = "English",

volume = "22",

pages = "459--462",

journal = "Solid State Communications",

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T1 - Far infrared resonant magnetoabsorption in low density Si inversion layers

AU - Kennedy, T. A.

AU - Wagner, R. J.

AU - McCombe, B. D.

AU - Tsui, D. C.

PY - 1977/5

Y1 - 1977/5

N2 - The density and temperature dependences of high frequency/resonant field (61.3 cm-1, 11T) resonant magnetoabsorption data in (100) Si inversion layers at low densities are strikingly different from those observed at lower frequencies/fields. The results, which include a dramatic resonant line narrowing at high fields, are discussed in light of single-electron localization and the possibility of a cooperative electronic transition assisted by the large magnetic field.

AB - The density and temperature dependences of high frequency/resonant field (61.3 cm-1, 11T) resonant magnetoabsorption data in (100) Si inversion layers at low densities are strikingly different from those observed at lower frequencies/fields. The results, which include a dramatic resonant line narrowing at high fields, are discussed in light of single-electron localization and the possibility of a cooperative electronic transition assisted by the large magnetic field.

UR - https://www.scopus.com/pages/publications/0017485130

U2 - 10.1016/0038-1098(77)90125-9

DO - 10.1016/0038-1098(77)90125-9

M3 - Article

AN - SCOPUS:0017485130

SN - 0038-1098

VL - 22

SP - 459

EP - 462

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Far infrared resonant magnetoabsorption in low density Si inversion layers

Abstract

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