Far-infrared magnetoabsorption study of weakly bound electrons in GaAs/AlxGa1-xAs multiple quantum wells

E. Glaser; B. V. Shanabrook; R. L. Hawkins; W. Beard; J. M. Mercy; B. D. McCombe; D. Musser

doi:10.1103/PhysRevB.36.8185

Far-infrared magnetoabsorption study of weakly bound electrons in GaAs/AlxGa1-xAs multiple quantum wells

E. Glaser
, B. V. Shanabrook
, R. L. Hawkins
, W. Beard
, J. M. Mercy
, B. D. McCombe
, D. Musser

Physics

Naval Research Laboratory
Air Force Research Laboratory
Laboratory for Physical Sciences
SUNY Buffalo
Lockheed Martin

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

Far-infrared magnetoabsorption experiments have been performed at 4.2 K on GaAs/AlxGa1-xAs multiple-quantum-well (MQW) heterostructures that were selectively doped with Si donors in the centers of the quantum wells and barrier layers. Data were obtained for several values of dopant concentration in the barriers. The results provide strong evidence for the binding of electrons in the wells to positively charged ions in the barriers.

Original language	English
Pages (from-to)	8185-8188
Number of pages	4
Journal	Physical Review B-Condensed Matter
Volume	36
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.36.8185
State	Published - 1987

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title = "Far-infrared magnetoabsorption study of weakly bound electrons in GaAs/AlxGa1-xAs multiple quantum wells",

abstract = "Far-infrared magnetoabsorption experiments have been performed at 4.2 K on GaAs/AlxGa1-xAs multiple-quantum-well (MQW) heterostructures that were selectively doped with Si donors in the centers of the quantum wells and barrier layers. Data were obtained for several values of dopant concentration in the barriers. The results provide strong evidence for the binding of electrons in the wells to positively charged ions in the barriers.",

author = "E. Glaser and Shanabrook, \{B. V.\} and Hawkins, \{R. L.\} and W. Beard and Mercy, \{J. M.\} and McCombe, \{B. D.\} and D. Musser",

year = "1987",

doi = "10.1103/PhysRevB.36.8185",

language = "English",

volume = "36",

pages = "8185--8188",

journal = "Physical Review B-Condensed Matter",

issn = "0163-1829",

publisher = "American Institute of Physics",

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T1 - Far-infrared magnetoabsorption study of weakly bound electrons in GaAs/AlxGa1-xAs multiple quantum wells

AU - Glaser, E.

AU - Shanabrook, B. V.

AU - Hawkins, R. L.

AU - Beard, W.

AU - Mercy, J. M.

AU - McCombe, B. D.

AU - Musser, D.

PY - 1987

Y1 - 1987

N2 - Far-infrared magnetoabsorption experiments have been performed at 4.2 K on GaAs/AlxGa1-xAs multiple-quantum-well (MQW) heterostructures that were selectively doped with Si donors in the centers of the quantum wells and barrier layers. Data were obtained for several values of dopant concentration in the barriers. The results provide strong evidence for the binding of electrons in the wells to positively charged ions in the barriers.

AB - Far-infrared magnetoabsorption experiments have been performed at 4.2 K on GaAs/AlxGa1-xAs multiple-quantum-well (MQW) heterostructures that were selectively doped with Si donors in the centers of the quantum wells and barrier layers. Data were obtained for several values of dopant concentration in the barriers. The results provide strong evidence for the binding of electrons in the wells to positively charged ions in the barriers.

UR - https://www.scopus.com/pages/publications/0005797161

U2 - 10.1103/PhysRevB.36.8185

DO - 10.1103/PhysRevB.36.8185

M3 - Article

AN - SCOPUS:0005797161

SN - 0163-1829

VL - 36

SP - 8185

EP - 8188

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

IS - 15

ER -

Far-infrared magnetoabsorption study of weakly bound electrons in GaAs/AlxGa1-xAs multiple quantum wells

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