Facile chemical solution deposition of high-mobility epitaxial germanium films on silicon

Guifu Zou; Hongmei Luo; Filip Ronning; Baoquan Sun; Thomas M. McCleskey; Anthony K. Burrell; Eve Bauer; Q. X. Jia

doi:10.1002/anie.200905804

Facile chemical solution deposition of high-mobility epitaxial germanium films on silicon

Guifu Zou
, Hongmei Luo
, Filip Ronning
, Baoquan Sun
, Thomas M. McCleskey
, Anthony K. Burrell
, Eve Bauer
, Q. X. Jia

Department of Materials Design and Innovation

Los Alamos National Laboratory
New Mexico State University College of Engineering
Soochow University

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Getting a move on: A facile chemical solution deposition method Is used for the first time for the epitaxial growth of germanium on an silicon substrate. The germanium films show Hall mobility values as high as 1700 Cm ²V^-1s1 for a carrier concentration of 3.45×10 ¹⁹ cm^-3 at room temperature. (Figure Presented)

Original language	English
Pages (from-to)	1782-1785
Number of pages	4
Journal	Angewandte Chemie - International Edition
Volume	49
Issue number	10
DOIs	https://doi.org/10.1002/anie.200905804
State	Published - Mar 1 2010

Keywords

Germanium
Mobility
Solution deposition
Thin films

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10.1002/anie.200905804

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title = "Facile chemical solution deposition of high-mobility epitaxial germanium films on silicon",

abstract = "Getting a move on: A facile chemical solution deposition method Is used for the first time for the epitaxial growth of germanium on an silicon substrate. The germanium films show Hall mobility values as high as 1700 Cm 2V-1s1 for a carrier concentration of 3.45{\texttimes}10 19 cm-3 at room temperature. (Figure Presented)",

keywords = "Germanium, Mobility, Solution deposition, Thin films",

author = "Guifu Zou and Hongmei Luo and Filip Ronning and Baoquan Sun and McCleskey, \{Thomas M.\} and Burrell, \{Anthony K.\} and Eve Bauer and Jia, \{Q. X.\}",

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T1 - Facile chemical solution deposition of high-mobility epitaxial germanium films on silicon

AU - Zou, Guifu

AU - Luo, Hongmei

AU - Ronning, Filip

AU - Sun, Baoquan

AU - McCleskey, Thomas M.

AU - Burrell, Anthony K.

AU - Bauer, Eve

AU - Jia, Q. X.

PY - 2010/3/1

Y1 - 2010/3/1

N2 - Getting a move on: A facile chemical solution deposition method Is used for the first time for the epitaxial growth of germanium on an silicon substrate. The germanium films show Hall mobility values as high as 1700 Cm 2V-1s1 for a carrier concentration of 3.45×10 19 cm-3 at room temperature. (Figure Presented)

AB - Getting a move on: A facile chemical solution deposition method Is used for the first time for the epitaxial growth of germanium on an silicon substrate. The germanium films show Hall mobility values as high as 1700 Cm 2V-1s1 for a carrier concentration of 3.45×10 19 cm-3 at room temperature. (Figure Presented)

KW - Germanium

KW - Mobility

KW - Solution deposition

KW - Thin films

UR - https://www.scopus.com/pages/publications/77749335440

U2 - 10.1002/anie.200905804

DO - 10.1002/anie.200905804

M3 - Article

AN - SCOPUS:77749335440

SN - 1433-7851

VL - 49

SP - 1782

EP - 1785

JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

IS - 10

ER -

Facile chemical solution deposition of high-mobility epitaxial germanium films on silicon

Abstract

Keywords

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