Fabrication technique of high density quantum-wire arrays by photolithography and metalorganic chemical vapor deposition

S. L. Yang; R. Barone; P. L. Liu; J. C. Chen

doi:10.1143/JJAP.30.L2120

Fabrication technique of high density quantum-wire arrays by photolithography and metalorganic chemical vapor deposition

S. L. Yang
, R. Barone
, P. L. Liu
, J. C. Chen

Department of Electrical Engineering

SUNY Buffalo
Varian Instrument Division

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated GaAs quantum-wire arrays by using photolithography and metalorganic chemical vapor deposition (MOCVD). Multiple quantum-wire structures with lateral dimensions less than 200 Â x 1200 Â have been obtained. An area filling factor greater than 50% can be achieved.

Original language	English
Pages (from-to)	L2120-L2122
Journal	Japanese Journal of Applied Physics
Volume	30
Issue number	12B
DOIs	https://doi.org/10.1143/JJAP.30.L2120
State	Published - Dec 1991

Keywords

Area filling factor
MOCVD
Photolithography
Quantum-wire arrays
V-groove

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10.1143/JJAP.30.L2120

Cite this

@article{11109d6f262e4a1a8d7f4561f16b6380,

title = "Fabrication technique of high density quantum-wire arrays by photolithography and metalorganic chemical vapor deposition",

abstract = "We have fabricated GaAs quantum-wire arrays by using photolithography and metalorganic chemical vapor deposition (MOCVD). Multiple quantum-wire structures with lateral dimensions less than 200 {\^A} x 1200 {\^A} have been obtained. An area filling factor greater than 50\% can be achieved.",

keywords = "Area filling factor, MOCVD, Photolithography, Quantum-wire arrays, V-groove",

author = "Yang, \{S. L.\} and R. Barone and Liu, \{P. L.\} and Chen, \{J. C.\}",

year = "1991",

month = dec,

doi = "10.1143/JJAP.30.L2120",

language = "English",

volume = "30",

pages = "L2120--L2122",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "12B",

}

TY - JOUR

T1 - Fabrication technique of high density quantum-wire arrays by photolithography and metalorganic chemical vapor deposition

AU - Yang, S. L.

AU - Barone, R.

AU - Liu, P. L.

AU - Chen, J. C.

PY - 1991/12

Y1 - 1991/12

N2 - We have fabricated GaAs quantum-wire arrays by using photolithography and metalorganic chemical vapor deposition (MOCVD). Multiple quantum-wire structures with lateral dimensions less than 200 Â x 1200 Â have been obtained. An area filling factor greater than 50% can be achieved.

AB - We have fabricated GaAs quantum-wire arrays by using photolithography and metalorganic chemical vapor deposition (MOCVD). Multiple quantum-wire structures with lateral dimensions less than 200 Â x 1200 Â have been obtained. An area filling factor greater than 50% can be achieved.

KW - Area filling factor

KW - MOCVD

KW - Photolithography

KW - Quantum-wire arrays

KW - V-groove

UR - https://www.scopus.com/pages/publications/84956258712

U2 - 10.1143/JJAP.30.L2120

DO - 10.1143/JJAP.30.L2120

M3 - Article

AN - SCOPUS:84956258712

SN - 0021-4922

VL - 30

SP - L2120-L2122

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12B

ER -

Fabrication technique of high density quantum-wire arrays by photolithography and metalorganic chemical vapor deposition

Abstract

Keywords

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