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Fabrication of epitaxial γ-Al2O3 and spinel NiAl2O4 films on SrTiO3 by pulsed laser ablation

  • Junsoo Shin
  • , Amit Goyal
  • , Karren More
  • , Sung Hun Wee
  • Oak Ridge National Laboratory
  • University of Tennessee

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Spinel γ-Al2O3 and NiAl2O4 thin films were grown on (0 0 1) SrTiO3 substrates by pulsed laser deposition. The high quality of epitaxial growth and cube-on-cube orientation of the films were confirmed by X-ray diffraction and transmission electron microscopy. The growth of NiAl2O4 thin films is related to the reaction between sequentially deposited γ-Al2O3 and NiO layers. These films were grown using a unique "multi-target" approach.

Original languageEnglish
Pages (from-to)210-213
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number1
DOIs
StatePublished - Dec 15 2008

Keywords

  • A1. Crystal structure
  • A3. Pulsed laser deposition
  • B1. Aluminum oxide
  • B1. Spinel

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