Abstract
Spinel γ-Al2O3 and NiAl2O4 thin films were grown on (0 0 1) SrTiO3 substrates by pulsed laser deposition. The high quality of epitaxial growth and cube-on-cube orientation of the films were confirmed by X-ray diffraction and transmission electron microscopy. The growth of NiAl2O4 thin films is related to the reaction between sequentially deposited γ-Al2O3 and NiO layers. These films were grown using a unique "multi-target" approach.
| Original language | English |
|---|---|
| Pages (from-to) | 210-213 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 311 |
| Issue number | 1 |
| DOIs | |
| State | Published - Dec 15 2008 |
Keywords
- A1. Crystal structure
- A3. Pulsed laser deposition
- B1. Aluminum oxide
- B1. Spinel
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