@inproceedings{60a94bab152d4417937f0f4351023057,
title = "Fabrication and characterization of Si/GaInP heterojunction photodetectors",
abstract = "This paper presents the fabrication of the Si/GaInP heterojunction photodetectors using transfer printing of silicon nanomembranes (SiNMs). Doped SiNM was transferred to a GaInP/GaAs substrate using a polydimethylsiloxane (PDMS) stamp. An adhesion interfacial layer was used to bond the two materials together. The heterogeneous integration of Si, GaInP, and GaAs layers formed a P-I-N structure for photo detection. Very low dark current of 0.82 nA was measured under a reverse bias of 3 V. A photo current to dark current ratio of 7.5e3 was measured. This result shows high potential of heterojunction photodetectors based on the transfer printing method.",
keywords = "dry transfer, heterojunction, photodetector",
author = "Munho Kim and Seo, \{Jung Hun\} and Hongjun Yang and Jian Shi and Luke Mawst and Weidong Zhou and Xudong Wang and Zhenqiang Ma",
year = "2012",
doi = "10.1109/SOPO.2012.6271117",
language = "English",
isbn = "9781457709111",
series = "2012 Symposium on Photonics and Optoelectronics, SOPO 2012",
booktitle = "2012 Symposium on Photonics and Optoelectronics, SOPO 2012",
note = "2012 International Symposium on Photonics and Optoelectronics, SOPO 2012 ; Conference date: 21-05-2012 Through 23-05-2012",
}