Exciton localization and stokes' shift in Zn1- xCdxO thin films depending on chemical composition

Hong Seong Kang; Sung Hoon Lim; Jae Won Kim; Hyun Woo Chang; Gun Hee Kim; Jong Hoon Kim; Sang Yeol Lee; Y. Li; Jang Sik Lee; J. K. Lee; M. A. Nastasi; S. A. Crooker; Q. X. Jia

doi:10.1016/j.jcrysgro.2005.10.045

Exciton localization and stokes' shift in Zn_1- _xCd_xO thin films depending on chemical composition

Hong Seong Kang
, Sung Hoon Lim
, Jae Won Kim
, Hyun Woo Chang
, Gun Hee Kim
, Jong Hoon Kim
, Sang Yeol Lee
, Y. Li
, Jang Sik Lee
, J. K. Lee
, M. A. Nastasi
, S. A. Crooker
, Q. X. Jia

Department of Materials Design and Innovation

Yonsei University
Los Alamos National Laboratory Materials Science and Technology Division

Research output: Contribution to journal › Conference article › peer-review

21 Scopus citations

Abstract

Zn_1-xCd_xO films were grown on (0 0 0 1) sapphire substrates by pulsed laser deposition. Structural and optical properties of Zn_1-xCd_xO films were strongly correlated to the processing conditions. The optical energy band gap of Zn _1-xCd_xO thin films, measured by photoluminescence and transmittance, changed from 3.248 to 3.291 eV at 275 K. Increase of Cd content also leads to the emission broadening and degraded crystallinity. The absorption edge and ultraviolet emission peak shift to lower energy from 3.291 to 3.248 eV and 3.278 to 3.106 eV, respectively, with increasing Cd content from 0.3% to 3% at 275 K. The Stokes' shift between the absorption and emission indicates the increase of localization of exciton with Cd content. Stokes' shift increases with Cd content caused mainly by the localized states in ZnCdO films.

Original language	English
Pages (from-to)	70-73
Number of pages	4
Journal	Journal of Crystal Growth
Volume	287
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.10.045
State	Published - Jan 18 2006
Event	Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials - Duration: Jul 3 2005 → Jul 8 2005

Keywords

A1. Characterization
A3. Physical vapor deposition processes
B2. Semiconducting ternary compounds

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10.1016/j.jcrysgro.2005.10.045

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title = "Exciton localization and stokes' shift in Zn1- xCdxO thin films depending on chemical composition",

abstract = "Zn1-xCdxO films were grown on (0 0 0 1) sapphire substrates by pulsed laser deposition. Structural and optical properties of Zn1-xCdxO films were strongly correlated to the processing conditions. The optical energy band gap of Zn 1-xCdxO thin films, measured by photoluminescence and transmittance, changed from 3.248 to 3.291 eV at 275 K. Increase of Cd content also leads to the emission broadening and degraded crystallinity. The absorption edge and ultraviolet emission peak shift to lower energy from 3.291 to 3.248 eV and 3.278 to 3.106 eV, respectively, with increasing Cd content from 0.3\% to 3\% at 275 K. The Stokes' shift between the absorption and emission indicates the increase of localization of exciton with Cd content. Stokes' shift increases with Cd content caused mainly by the localized states in ZnCdO films.",

keywords = "A1. Characterization, A3. Physical vapor deposition processes, B2. Semiconducting ternary compounds",

author = "Kang, \{Hong Seong\} and Lim, \{Sung Hoon\} and Kim, \{Jae Won\} and Chang, \{Hyun Woo\} and Kim, \{Gun Hee\} and Kim, \{Jong Hoon\} and Lee, \{Sang Yeol\} and Y. Li and Lee, \{Jang Sik\} and Lee, \{J. K.\} and Nastasi, \{M. A.\} and Crooker, \{S. A.\} and Jia, \{Q. X.\}",

year = "2006",

month = jan,

day = "18",

doi = "10.1016/j.jcrysgro.2005.10.045",

language = "English",

volume = "287",

pages = "70--73",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials ; Conference date: 03-07-2005 Through 08-07-2005",

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TY - JOUR

T1 - Exciton localization and stokes' shift in Zn1- xCdxO thin films depending on chemical composition

AU - Kang, Hong Seong

AU - Lim, Sung Hoon

AU - Kim, Jae Won

AU - Chang, Hyun Woo

AU - Kim, Gun Hee

AU - Kim, Jong Hoon

AU - Lee, Sang Yeol

AU - Li, Y.

AU - Lee, Jang Sik

AU - Lee, J. K.

AU - Nastasi, M. A.

AU - Crooker, S. A.

AU - Jia, Q. X.

PY - 2006/1/18

Y1 - 2006/1/18

N2 - Zn1-xCdxO films were grown on (0 0 0 1) sapphire substrates by pulsed laser deposition. Structural and optical properties of Zn1-xCdxO films were strongly correlated to the processing conditions. The optical energy band gap of Zn 1-xCdxO thin films, measured by photoluminescence and transmittance, changed from 3.248 to 3.291 eV at 275 K. Increase of Cd content also leads to the emission broadening and degraded crystallinity. The absorption edge and ultraviolet emission peak shift to lower energy from 3.291 to 3.248 eV and 3.278 to 3.106 eV, respectively, with increasing Cd content from 0.3% to 3% at 275 K. The Stokes' shift between the absorption and emission indicates the increase of localization of exciton with Cd content. Stokes' shift increases with Cd content caused mainly by the localized states in ZnCdO films.

AB - Zn1-xCdxO films were grown on (0 0 0 1) sapphire substrates by pulsed laser deposition. Structural and optical properties of Zn1-xCdxO films were strongly correlated to the processing conditions. The optical energy band gap of Zn 1-xCdxO thin films, measured by photoluminescence and transmittance, changed from 3.248 to 3.291 eV at 275 K. Increase of Cd content also leads to the emission broadening and degraded crystallinity. The absorption edge and ultraviolet emission peak shift to lower energy from 3.291 to 3.248 eV and 3.278 to 3.106 eV, respectively, with increasing Cd content from 0.3% to 3% at 275 K. The Stokes' shift between the absorption and emission indicates the increase of localization of exciton with Cd content. Stokes' shift increases with Cd content caused mainly by the localized states in ZnCdO films.

KW - A1. Characterization

KW - A3. Physical vapor deposition processes

KW - B2. Semiconducting ternary compounds

UR - https://www.scopus.com/pages/publications/29844441093

U2 - 10.1016/j.jcrysgro.2005.10.045

DO - 10.1016/j.jcrysgro.2005.10.045

M3 - Conference article

AN - SCOPUS:29844441093

SN - 0022-0248

VL - 287

SP - 70

EP - 73

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials

Y2 - 3 July 2005 through 8 July 2005

ER -

Exciton localization and stokes' shift in Zn_1- _xCd_xO thin films depending on chemical composition

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Keywords

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