Exciton and biexciton recombination in semiconductor nanocrystals

J. P. Zheng; H. S. Kwok

doi:10.1063/1.112125

Exciton and biexciton recombination in semiconductor nanocrystals

J. P. Zheng
, H. S. Kwok

Department of Electrical Engineering

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The time-resolved photoluminescence of semiconductor nanocrystals was obtained as a function of laser excitation intensity at a low temperature. Exciton and biexciton recombination processes were clearly identified. At laser intensities lower than 3.3×10⁵ W/cm², only exciton recombination with a lifetime of 4 ns was obtained. At higher laser intensities, biexciton recombination with a lifetime of 1 ns appeared. At laser intensities above 10⁶ W/cm², recombination of electron-hole plasma occurred with a much shorter lifetime.

Original language	English
Pages (from-to)	1151-1153
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	9
DOIs	https://doi.org/10.1063/1.112125
State	Published - 1994

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@article{3c7a1c26454a407195bd522c943b37b6,

title = "Exciton and biexciton recombination in semiconductor nanocrystals",

abstract = "The time-resolved photoluminescence of semiconductor nanocrystals was obtained as a function of laser excitation intensity at a low temperature. Exciton and biexciton recombination processes were clearly identified. At laser intensities lower than 3.3×105 W/cm2, only exciton recombination with a lifetime of 4 ns was obtained. At higher laser intensities, biexciton recombination with a lifetime of 1 ns appeared. At laser intensities above 106 W/cm2, recombination of electron-hole plasma occurred with a much shorter lifetime.",

author = "Zheng, \{J. P.\} and Kwok, \{H. S.\}",

year = "1994",

doi = "10.1063/1.112125",

language = "English",

volume = "65",

pages = "1151--1153",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

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TY - JOUR

T1 - Exciton and biexciton recombination in semiconductor nanocrystals

AU - Zheng, J. P.

AU - Kwok, H. S.

PY - 1994

Y1 - 1994

N2 - The time-resolved photoluminescence of semiconductor nanocrystals was obtained as a function of laser excitation intensity at a low temperature. Exciton and biexciton recombination processes were clearly identified. At laser intensities lower than 3.3×105 W/cm2, only exciton recombination with a lifetime of 4 ns was obtained. At higher laser intensities, biexciton recombination with a lifetime of 1 ns appeared. At laser intensities above 106 W/cm2, recombination of electron-hole plasma occurred with a much shorter lifetime.

AB - The time-resolved photoluminescence of semiconductor nanocrystals was obtained as a function of laser excitation intensity at a low temperature. Exciton and biexciton recombination processes were clearly identified. At laser intensities lower than 3.3×105 W/cm2, only exciton recombination with a lifetime of 4 ns was obtained. At higher laser intensities, biexciton recombination with a lifetime of 1 ns appeared. At laser intensities above 106 W/cm2, recombination of electron-hole plasma occurred with a much shorter lifetime.

UR - https://www.scopus.com/pages/publications/0010762159

U2 - 10.1063/1.112125

DO - 10.1063/1.112125

M3 - Article

AN - SCOPUS:0010762159

SN - 0003-6951

VL - 65

SP - 1151

EP - 1153

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Exciton and biexciton recombination in semiconductor nanocrystals

Abstract

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