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Evolving magneto-electric device technologies

  • N. Sharma
  • , J. P. Bird
  • , Ch Binek
  • , P. A. Dowben
  • , D. Nikonov
  • , A. Marshall
  • University of Texas at Dallas
  • University of Nebraska-Lincoln
  • Intel

Research output: Contribution to journalReview articlepeer-review

23 Scopus citations

Abstract

Here, several classes of magneto-electric devices, and their possible implementations as complementary metal-oxide-semiconductor (CMOS) replacements, are discussed. We consider how these devices can provide considerable improvements in functionality over CMOS when employed in novel circuit architectures. In the context of the magneto-electric device technologies discussed here, we detail the expansion of benchmarking into some of the newer beyond-CMOS technologies. This has required circuit level simulations, using Cadence Spectre or Spice, and Verilog-A based models of the magneto-electric magnetic tunnel junction devices have been used for circuit validation. This has been done as part of a global effort to develop comparative benchmarking standards across logic families, even as new benchmarking methodologies are being developed, while maintaining the familiar CMOS benchmarks.

Original languageEnglish
Article number073001
JournalSemiconductor Science and Technology
Volume35
Issue number7
DOIs
StatePublished - Jul 2020

Keywords

  • Beyond-complementary metal-oxide-semiconductor
  • complementary metal-oxide-semiconductor
  • full-adder
  • logic
  • magneto-electric feld effect transistor
  • magneto-electric magnetic tunnel junction
  • spintronics
  • Verilog-A

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