Evidence of hot carriers at elevated temperatures in InAs/AlAs0.84Sb0.16 quantum wells

J. Tang; V. R. Whiteside; H. Esmaielpour; S. Vijeyaragunathan; T. D. Mishima; M. B. Santos; I. R. Sellers

doi:10.1117/12.2079591

Evidence of hot carriers at elevated temperatures in InAs/AlAs_0.84Sb_0.16 quantum wells

J. Tang
, V. R. Whiteside
, H. Esmaielpour
, S. Vijeyaragunathan
, T. D. Mishima
, M. B. Santos
, I. R. Sellers

Department of Electrical Engineering

University of Oklahoma

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

InAs/AlAs_0.84Sb_0.14 quantum wells (QWs) are investigated as a potential system for applications in hot carrier solar cells. Temperature and power dependent photoluminescence (PL) measurements show evidence of carrier localization. Evidence of for the presence of hot carriers is provided through the broadening of the high-energy tail in PL with increasing excitation power. Moreover, with increasing temperature, the stability of the hot carriers appears to improve despite the increased contribution of phonons at elevated temperatures. This is attributed to the reduced radiative recombination rate driven by the type-II band offset inherent in this system; which is suggested to result in inhibited hot carrier relaxation through electron pile-up in the conduction band.

Original language	English
Title of host publication	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV
Editors	Alexandre Freundlich, Jean-Francois Guillemoles, Masakazu Sugiyama
Publisher	SPIE
ISBN (Electronic)	9781628414486
DOIs	https://doi.org/10.1117/12.2079591
State	Published - 2015
Event	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV - San Francisco, United States Duration: Feb 10 2015 → Feb 12 2015

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9358
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV
Country/Territory	United States
City	San Francisco
Period	02/10/15 → 02/12/15

Keywords

alloy fluctuations
hot carriers
Type-II quantum wells

Access to Document

10.1117/12.2079591

Cite this

Tang, J., Whiteside, V. R., Esmaielpour, H., Vijeyaragunathan, S., Mishima, T. D., Santos, M. B., & Sellers, I. R. (2015). Evidence of hot carriers at elevated temperatures in InAs/AlAs_0.84Sb_0.16 quantum wells. In A. Freundlich, J.-F. Guillemoles, & M. Sugiyama (Eds.), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV Article 93580Z (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9358). SPIE. https://doi.org/10.1117/12.2079591

Tang, J. ; Whiteside, V. R. ; Esmaielpour, H. et al. / Evidence of hot carriers at elevated temperatures in InAs/AlAs_0.84Sb_0.16 quantum wells. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV. editor / Alexandre Freundlich ; Jean-Francois Guillemoles ; Masakazu Sugiyama. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{d08680add6804abfb4c27aa4e311b82f,

title = "Evidence of hot carriers at elevated temperatures in InAs/AlAs0.84Sb0.16 quantum wells",

abstract = "InAs/AlAs0.84Sb0.14 quantum wells (QWs) are investigated as a potential system for applications in hot carrier solar cells. Temperature and power dependent photoluminescence (PL) measurements show evidence of carrier localization. Evidence of for the presence of hot carriers is provided through the broadening of the high-energy tail in PL with increasing excitation power. Moreover, with increasing temperature, the stability of the hot carriers appears to improve despite the increased contribution of phonons at elevated temperatures. This is attributed to the reduced radiative recombination rate driven by the type-II band offset inherent in this system; which is suggested to result in inhibited hot carrier relaxation through electron pile-up in the conduction band.",

keywords = "alloy fluctuations, hot carriers, Type-II quantum wells",

author = "J. Tang and Whiteside, \{V. R.\} and H. Esmaielpour and S. Vijeyaragunathan and Mishima, \{T. D.\} and Santos, \{M. B.\} and Sellers, \{I. R.\}",

note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV ; Conference date: 10-02-2015 Through 12-02-2015",

year = "2015",

doi = "10.1117/12.2079591",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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editor = "Alexandre Freundlich and Jean-Francois Guillemoles and Masakazu Sugiyama",

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Tang, J, Whiteside, VR, Esmaielpour, H, Vijeyaragunathan, S, Mishima, TD, Santos, MB & Sellers, IR 2015, Evidence of hot carriers at elevated temperatures in InAs/AlAs_0.84Sb_0.16 quantum wells. in A Freundlich, J-F Guillemoles & M Sugiyama (eds), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV., 93580Z, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9358, SPIE, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, San Francisco, United States, 02/10/15. https://doi.org/10.1117/12.2079591

Evidence of hot carriers at elevated temperatures in InAs/AlAs_0.84Sb_0.16 quantum wells. / Tang, J.; Whiteside, V. R.; Esmaielpour, H. et al.
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV. ed. / Alexandre Freundlich; Jean-Francois Guillemoles; Masakazu Sugiyama. SPIE, 2015. 93580Z (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9358).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tang, J.

AU - Whiteside, V. R.

AU - Esmaielpour, H.

AU - Vijeyaragunathan, S.

AU - Mishima, T. D.

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AU - Sellers, I. R.

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N2 - InAs/AlAs0.84Sb0.14 quantum wells (QWs) are investigated as a potential system for applications in hot carrier solar cells. Temperature and power dependent photoluminescence (PL) measurements show evidence of carrier localization. Evidence of for the presence of hot carriers is provided through the broadening of the high-energy tail in PL with increasing excitation power. Moreover, with increasing temperature, the stability of the hot carriers appears to improve despite the increased contribution of phonons at elevated temperatures. This is attributed to the reduced radiative recombination rate driven by the type-II band offset inherent in this system; which is suggested to result in inhibited hot carrier relaxation through electron pile-up in the conduction band.

AB - InAs/AlAs0.84Sb0.14 quantum wells (QWs) are investigated as a potential system for applications in hot carrier solar cells. Temperature and power dependent photoluminescence (PL) measurements show evidence of carrier localization. Evidence of for the presence of hot carriers is provided through the broadening of the high-energy tail in PL with increasing excitation power. Moreover, with increasing temperature, the stability of the hot carriers appears to improve despite the increased contribution of phonons at elevated temperatures. This is attributed to the reduced radiative recombination rate driven by the type-II band offset inherent in this system; which is suggested to result in inhibited hot carrier relaxation through electron pile-up in the conduction band.

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Tang J, Whiteside VR, Esmaielpour H, Vijeyaragunathan S, Mishima TD, Santos MB et al. Evidence of hot carriers at elevated temperatures in InAs/AlAs_0.84Sb_0.16 quantum wells. In Freundlich A, Guillemoles JF, Sugiyama M, editors, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV. SPIE. 2015. 93580Z. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2079591